[A-7-7] Post-Metal-CMP Cleaning Using Oxalic Acid

H. Aoki、S. Yamasaki、N. Aoto (1.ULSI Device Development Laboratories, NEC Corporation)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-8] Ultra-Low Ressitance, Through-Wafer Via (TWV) Technology and Its Applications in Three Dimensional Structures on Silicon

Hyongsok T. Soh、C. Patrick Yue、Anthony M. McCarthy、Changsup Ryu、Thomas H. Lee、Calvin F. Quate (1.E. L. Ginzton Laboratory and Center for Integrated Systems, Stanford University、2.Lawrence Livermore National Laboratory)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-9] A New Wafer-Scale Chip-on-Chip (W-COC) Packaging Technology Using Adhesive Injection Method

K. Sakuma、K. W. Lee、T. Nakamura、H. Kurino、M. Koyanagi (1.Dept. of Machine Intelligence and System Engineering, Tohoku University)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-1] On Shallow Trench Isolation for Deep Submission CMOS Technologies

Amitava Chatterjee、M. Nandakumar、Stan Ashburn、Vikas Gupta、Siang P. Kwok、Ih-Chin Chen (1.Silicon Technology Development, Texas Instruments)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-2] A Manufacturable HDP Oxide Filled STI Process with SiN Liner for the Deep Sub-Micron Inter-Well Isolation

H. S. Lee、S. J. Kim、T. Park、J. H. Choi、K. W. Park、B. K. Hwang、Y. G. Shin、 H. K. Kang. Z. Li、Y. Lee、F. Moghadam. (1.Semiconductor R&D Center, Samsung Electronics Co., Ltd.、2.Applied Materials, Inc.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-3] Suppression of Transient Enhanced Diffusion by LOCOS Induced Stress

Masaki Okuno、Takayuki Aoyama、Satoshi Nakamura、Hiroshi Arimoto、Kei Horiuchi (1.Fujitsu Laboratories Limited)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-1] Silicon-on-Insulator Material for Deep Submission Technologies

W. P. Maszara (1.SEMATECH, Austin, TX and AMD)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-2] Analysis of Buried-Oxide Dielectric Breakdown Mechanism in Low-Dose SIMOX Structures

Keisuke KAWAMURA、Takayuki YANO、Isao HAMAGUCHI、Seiji TAKAYAMA、Yoichi NAGATAKE、Atsuki MATSUMURA (1.Advanced Technology Research Laboratories, Nippon Steel Corporation)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-3] Extremely Low Si Etching (＜1nm) during Hydrogen Annealing of Silicon-on-Insulator

Nobuhiko SATO、Masataka. ITO、Jun NAKAYAMA、Takao YONEHARA (1.ELTRAN project, Canon Inc.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-4] Oxygen Precipitates and Related Defects in SOI Substrate Fabricated by Wafer Bonding and H+ Splitting

Atsushi Ogura、Michio Tajima (1.Silicon Systems Research Laboratories, NEC Corporation、2.Institute of Space and Astronautical Science)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード