[A-2-2] Self-Limiting Atomic-Layer Selective Deposition of Silicon Nitride by Temperature-Controlled Method

Kenji Ooba、Yoshimitsu Nakashima、Anri Nakajima、Shin Yokoyama (1.Research Center for Nanodevices and Systems, Hiroshima University)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-3] Ultra-Low-Temperature Formation of Si Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment

Yuji Saito、Katsuyuki Sekine、Masaki Hirayama、Tadahiro Ohmi (1.Department of Electronic Engineering, Graduate School of Engineering, Tohoku University)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-4] New PentaCoordinated Si(PCS) Model for SiN CVD Mechanism

Shigehiko Saida、Yoshitaka Tsunashima (1.Microelectronics Engineering Laboratory, TOSHIBA Corp.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-5] Formation of Very Thin Epitaxial Al2O3 Pre-Layer with Very Smooth Surface on Si(111) Using Protective Oxide Layer

Young-Chul Jung、Hiroyuki Miura、Makoto Ishida (1.Department of Electric and Electronic Engineering, Toyohashi University of Technology)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-1] Implementation of "System On a Chip" Merging DRAM and Analog with High Performance 0.35nm Logic Device

Sunil Yu、Jong Shik Yoon、Hyae Ryoung Lee、Chul-Soon Kwon、Dong Woo Kim、Won Chul Kim、Chang-Sik Choi (1.LSI TD, System LSI Business, Samsung Electronics Co. Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-2] Trap Assisted Leakage Mechanism of 'worst' Junction in Giga-bit DRAM Using Negative Word-Line Voltage

Hiroshi SUZUKI、Manabu KOJIMA、Yasuo NARA (1.Fujitsu Laboratories Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-3] Silicide-Extension Technology for High-Density Embedded SRAM Cells in 0.18um-CMOS Generation and Beyond

K. Matsui、K. Noda、K. Inoue、T. Itani、H. Iwasaki、T. Yoshii、T. Tanigawa (1.ULSI Device Development Laboratory, NEC Corporation)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-4] Optimization of Giga-bit DRAM Cell Transistors by Channel and Drain Engineering

M. Kojima、H. Suzuki、T. Miyashita、H. Anzai、T. Nagata、K. Takahashi、M. Sato、Y. Nara (1.Fujitsu Laboratories Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-5] An Analytical Delay Model for Read Operation at Any Position on DRAM Bit Lines

Hongchin Lin、Chia-Hsiang Sha、Shyh-Chyi Wong (1.Dept. of Electrical Engineering, National Chung-Hsing University、2.Institute of Electrical Engineering, Feng-Chia University)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-1-6] Scaling Law for Secondary Cosmic-Ray Neutron-Induced Soft-Errors in DRAMs

Shigeo Satoh、Yoshiharu Tosaka、Toru Itakura (1.Fujitsu Laboratories Ltd.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード