[LA-4] Ultra Thin SrBi2Ta2O9 Ferroelectric Films Grown by Liquid Source CVD Using BiOx Buffer Layers

H. Yamawaki、S. Miyagaki、T. Eshita、Y. Arimoto (1.FUJITSU LABORATORIES LTD.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-1] MOSFETs with nm-Thick Gate SiO2 Grown at Low Temperatures Utilizing Activated Oxygen

T. Fuyuki、T. Futatsuyama、Y. Ueda、K. Moriizumi、H. Matsunami (1.Department of Electronic Science and Engineering, Kyoto University、2.Graduate School of Material Science, Nara Institute of Science and Technology)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-2] Ultrathin Nitride/Oxide (N/O) Gate Dielectrics for p+-poly Gated PMOSFETs Prepared by a Combined Remote Plasma Enhanced CVD/Thermal Oxidation Process

Yider WU、Gerald LUCOVSKY (1.Departments of Electrical and Computer Engineering, North Carolina State University、2.Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-3] Dual Gate Oxide Process Integration for High Performance Embedded Memory Products

Hideo Oi、Yasuhito Shiho、Peter Chen、Navakant Bhat (1.Consumer Systems Group and Networking & Computing Systems Group, Semiconductor Products Sector, MOTOROLA Inc.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-4] The Deuterium Effect on SILC

B. C. Lin、Y. C. Cheng、A. Chin、T. Wang、C. Tsai (1.Dept. of Electronic Engineering, National Chiao Tung Univ.)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-1] Evaluation of Interface SiOx Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO2-Si Diode

Osamu Maida、Norio Okada、Takeshi Kanashima、Masanori Okuyama (1.Department of Physical Science, Graduate School of Engineering Science, Osaka University)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-2] Differences between the Electrical Properties of Nitrided Si-SiO2 Interfaces Formed by (a) Post-Oxidation, Remote Plasma-Assisted Nitridation and (b) Remote Plasma-Assisted Deposition

Hiro NIIMI、Gerald LUCOVSKY、Yider WU (1.Departments of Materials Science and Engineering, North Carolina State University、2.Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University、3.Departments of Electrical and Computer Engineering, North Carolina State University)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-3] Analysis of Direct Tunneling for Thin SiO2 Film

Naoto MATSUO、Takashi MIURA、Aki URAKAMI、Tadaki MIYOSHI (1.Department of Electrical & Electronic Engineering, Yamaguchi University)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-4] Interfacial Structures of SiO2/Si

T. Yamasaki、C. Kaneta、T. Uchiyama、T. Uda、K. Terakura (1.Fujitsu Laboratories Limited)

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-5] Atomic-Scale Structure of SiO2/Si(001) Interface Formed by Furnace Oxidation

Noriyuki Miyata、Heiji Watanabe、Masakazu Ichikawa (1.Joint Research Center for Atom Technology, Angstrom Technology Partnership (JRCAT-ATP) c/o National Institute for Advanced Interdisciplinary Research (NAIR))

1998 International Conference on Solid State Devices and Materials |PDF ダウンロード