[P3-5] Atomic Order Flattening of Hydrogen-Terminated Si(110) substrate For Next Generation ULSI Devices

Hiroshi Akahori、Keiichi Nii、Akinobu Teramoto、Shigetoshi Sugawa、Tadahiro Ohmi (1.New Industry Creation Hatchery Center, Tohoku University、2.Department of Management of Science and Technology Graduate School of Engineering, Tohoku University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P3-6] An Integrated Gate Stack Process for Sub-90nm CMOS Technology

S. J. Chang、S. Y. Wu、C. L Chen、T. L Lee、Y. M. Lin、Y. S. Tsai、H. D. Su、S. B. Chen、Y. S Chen、M. S. Liang、Y. C. See、Y. C. Sun (1.Taiwan Semiconductor Manufacturing Company)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P3-7] Precursors for chemical vapor deposition of NiSi

Masato ISHIKAWA、Takeshi KADA、Hideaki MACHIDA、Yoshio OHSHITA、Atsushi OGURA (1.Tri Chemical Laboratories Inc.、2.Toyota Technological Institute、3.Silicon Systems Res. Labs, NEC Corp.)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P3-8] MOCVD HfAlxOy Gate Dielectrics Deposited Using Single Cocktail Liquid Source

Moon Sig Joo、Byung Jin Cho、Chia Ching Yeo、Sung Jin Whoang、Shajan Matthew、L. K. Bera、N. Balasubramanian、Dim-Lee Kwong (1.Silicon Nano Device Laboratory, Dept. of Electrical and Computer Engineering, National University of Singapore、2.Jusung Engineering Co., Ltd.、3.Institute of Microelectronics、4.Dept. of Electrical and Computer Engineering, The University of Texas)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P3-9] Tight-Binding Quantum Chemical Molecular Dynamics Simulation on Chemical Mechanical Polishing Process of Cu Surface

Naoyuki Isoda、Katsumi Sasata、Toshiyuki Yokosuka、Akira Endou、Momoji Kubo、Akira Imamura、Akira Miyamoto (1.Department of Applied Chemistry, Graduate School of Engineering, Tohoku University、2.Hiroshima Kokusai Gakuin University、3.New Industry Creation Hatchery Center, Tohoku University)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P3-10] A Novel Photosensitive Porous Low-k Interlayer Dielectric Film

Shin-Ichiro Kuroki、Toshiaki Hirota、Takamaro Kikkawa (1.Research Center for Nanodevices and Systems, Hiroshima University、2.TAZMO Co.,Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P3-11] Increase of Crystallization Temperatures of Ultrathin Al2O3 Films Caused by Si Diffusion during Annealing

S. Migita、J.W. Park、T. Yasuda、M. Nishizawa、R. Kuse、T. Nabatame、A. Toriumi (1.MIRAI-AIST、2.MIRAI-ASET, AIST Tsukuba, Japan、3.Department of Materials Science, University of Tokyo)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P3-12] Neutral Beam Etching for Damage-free 50 nm Gate Electrode Patterning

Shuichi Noda、Hirotomo Nishimori、Tohru Ida、Tsunetoshi Arikado、Katsunori Ichiki、Seiji Samukawa (1.Institute of Fluid Science, Tohoku University、2.Semiconductor Leading Edge Technologies, Inc. (Selete)、3.Ebara Research Co., Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P3-13] Defect Generation in Gate Oxide by Selective Oxidation in Hydrogen-rich Wet Ambient

Heung-Jae Cho、Kwan-Yong Lim、Se-Aug Jang、Jung-Ho Lee、Jae-Geun Oh、Yong-Soo Kim、Hong-Seon Yang、Hyun-Chul Sohn (1.Memory R&D Division, Hynix Semiconductor Inc.)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P3-14] Improving Electrical Properties of CVD HfO2 by Multi-Step Deposition and Annealing in a Gate Cluster Tool

Chia Ching Yeo、Byung Jin Cho、Moon Sig Joo、Sung Jin Whoang、Dim-Lee Kwong、L. K. Bera、Shajan Mathew、N. Balasubramanian (1.Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore、2.Jusung Engineering Co., Ltd.、3.Microelectronics Research Center, The University of Texas at Austin、4.Institutes of Microelectronics)

2003 International Conference on Solid State Devices and Materials |PDF ダウンロード