[P1-27] Depth Profile of Various Bonding Configration of Nitrogen Atoms in Silicon Oxynitrides formed by Plasma Nitridation

Hiroshi Nohira、Seiji Shinagawa、Tetsuya Ikuta、Mitsuaki Hori、Masataka Kase、Hideyuki Okamoto、Takeo Hattori (1.Faculty of Engineering, Musashi Institute of Technology.、2.Fujitsu Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P1-28] A new landing plug formation in a submicron self-aligned contact etching

M.S. Lee、S.K. Lee、T.W. Jung、D.D. Lee、S.C. Moon (1.Hynix Semiconductor Inc., Memory R&D Div)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P1-29L] Modulation of NiGe/Ge Schottky Barrier Height by Dopant and Sulfur Segregation during Ni Germanidation for Metal S/D Ge MOSFETs

Keiji Ikeda、Yoshimi Yamashita、Noriyuki Taoka、Naoharu Sugiyama、Shin-ichi Takagi (1.MIRAI-ASET, AIST、2.MIRAI-ASRC, AIST、3.The University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P1-30L] Moisture Absorption-Induced Permittivity Deterioration and Surface Roughness Enhancement of Lanthanum Oxide Films on Silicon

Yi Zhao、Masahiro Toyama、Koji Kita、Kentaro Kyuno、Akira Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P2-1] Hydrocarbon Groups and Film Properties of SiOCH Dielectrics: Theoretical Inverstigations using Molecular Models

Nobuo Tajima、Tomoyuki Hamada、Takahisa Ohno、Katsumi Yoneda、Nobuyoshi Kobayashi、Satoshi Hasaka、Minoru Inoue (1.First Principles Simulation Group, Computational Materials Science Center, National Institute for Materials Science、2.The FSIS Center for Collaborative Research, Institute of Industrial Science, University of Tokyo、3.Research Dept. 1, Semiconductor Leading Edge Technologies, Inc. (Selete)、4.Taiyo Nippon Sanso Corporation)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P2-2] High frequency dielectric mapping using un-contact probe for dielectric materials

Hirofumi Kakemoto、Song-Min Nam、Satoshi Wada、Takaaki Tsurumi (1.Graduate school of Science and Engineering, Tokyo Institute of Technology)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P2-3] Infrared Complex Dielectric Function Analysis for Chemical Bonding Structure of Porous Silica Low Dielectric Constant Films

Syozo Takada、Nobuhiro Hata、Shingo Hishiya、Nobutoshi Fujii、Takahiro Nakayama、Takamaro Kikkawa (1.ASRC, AIST、2.MIRAI, ASRC-AIST、3.MIRAI, ASET、4.RCNS, Hiroshima University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P2-4] Effect of Pore Generating Materials on the Electrical and Mechanical Properties of Porous Low-k Films

Suhan Kim、Junhee Hahn、Kookheon Char (1.School of Chemical and Biological Engineering and NANO Systems Institute-National Core Research Center, Seoul National University、2.Division of Chemical Metrology & Materials Evolution, Korea Research Institute of Standards and Science)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P2-5] Grating Metal Structure with Low-K BCB and Electroplated Copper for High-Q Spiral Inductors

Sung-Ku Yeo、Seong-Ho Shin、Ju-Hyang Lee、Young-Se Kwon (1.Department of Electrical Engineering and Computer Science, KAIST)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P2-6] UV-Raman Spectroscopy System for Local and Global Strain Measurement in Si

Ichiro Chiba、Ryosuke Shimidzu、Kosuke Yamasaki、Daisuke Kosemura、Satoshi Tanaka、Atsushi Ogura (1.PHOTON Design Corporation.、2.School of Science and Engineering, Meiji University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード