[A-5-3] Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics

Kenji OKADA、Hiroyuki OTA、Tsuyoshi HORIKAWA、Yasuyuki TAMURA、Takaoki SASAKI、Tomonori AOYAMA、Fumio OOTSUKA、Akira TORIUMI (1.MIRAI-ASET, AIST、2.MIRAI-ASRC, AIST、3.Department of Materials Science, The University of Tokyo、4.Semiconductor Leading Edge Technologies (Selete))

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-4] Reliable Extractions of EOT and Vfb in Poly-Si Gate High-k MISFETs through Advanced Modeling of Gate and Substrate Capacitances

N. Yasuda、H. Ota、T. Horikawa、T. Nabatame、H. Satake、A. Toriumi、Y. Tamura、T. Sasaki、F. Ootsuka (1.MIRAI-ASET, AIST、2.MIRAI-ASRC, AIST、3.University of Tokyo、4.Selete, AIST)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-1] A New Hf-based Dielectric Member, HfLaOx, for Amorphous High-k Gate Insulators in Advanced CMOS

Yoshiki Yamamoto、Koji Kita、Kentaro Kyuno、Akira Toriumi (1.Department of Materials Engineering, School of Engineering, The Univ. of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-2] Design Methodology for La2O3-Based Ternally Higher-κ Dielectrics

Koji Kita、Yi Zhao、Yoshiki Yamamot、Kentaro Kyuno、Akira Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-6-3] Film structures and electrical properties of Pr silicate formed by pulsed laser deposition

Keiko Ariyoshi、Mitsuo Sakashita、Akira Sakai、Masaki Ogawa、Shigeaki Zaima (1.Graduate School of Engineering, Nagoya University、2.Center for Cooperative Research in Advanced Science & Technology, Nagoya University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-1] Atomic Layer Deposition of PMOS Metal Gate Electrodes and High-k/Metal Interface Reactions for Advanced Device Applications

G.N. Parsons、K.J. Park、D.B. Terry (1.Department of Chemical and Biomolecular Engineering North Carolina State University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-2] Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process

Yoshinori Tsuchiya、Masato Koyama、Junji Koga、Akira Nishiyama (1.Advanced LSI Technology Laboratory, Toshiba Corp.)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-7-3] Area Selective Flash Lamp Post-Deposition Annealing of High-k Film Using Si Photo Absorber for Metal Gate MISFETs with NiSi Source/Drain

Takeo Matsuki、Isamu Nishimura、Yasushi Akasaka、Kiyoshi Hayashi、Masataka Noguchi、Koji Yamashita、Kazuyoshi Torii、Naoki Kasai、Yasuo Nara (1.Research Department 1, Semiconductor Leading Edge Technologies, Inc.、2.Rohm、3.Renesas、4.NEC、5.Sanyo、6.Hitachi)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-1] MoXSiYNZ Metal Gate Electrode with Tunable Work Function for Advanced CMOS

P. Zhao、J. Kim、M. J. Kim、B. E. Gnade、R. M. Wallace (1.Dept. of Electrical Engineering, University of Texas at Dallas、2.School of Advanced Materials Eng., Kookmin University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[A-8-2] Ta-based metal gates (Ta, TaBx, TaNx and TaCx) -Modulated Work Function and Improved Thermal Stability-

Reika Ichihara、Yoshinori Tsuchiya、Yuuichi Kamimuta、Masato Koyama、Akira Nishiyama (1.Advanced LSI Technology Laboratory, Toshiba Corp.)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード