[B-3-4L] Mobility Increase in High-Ns Region in (110)-Oriented UTB pMOSFET Through Surface Roughness Improvement

Doni Januar、Gen Tsutsui、Masumi Saitoh、Toshiro Hiramoto (1.Institute of Industrial Science, University of Tokyo、2.Toshiba Corporation)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-1] Effects of Electron-Phonon Interaction on Transport Characteristics of Sub-10-nm Bulk-MOSFETs

Hiroshi Takeda、Nobuya Mori (1.Department of Electronic Engineering, Osaka University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-2] Suppression of the rebound of hot-electrons from the drain region in ballistic transport due to device geometry: A Monte Carlo study

Takashi Kurusu、Kenji Natori (1.Institute of Applied Physics, University of Tsukuba)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-3] A First Principles Study on Electronic Band Structures of Nano－Scaled SOl Films

Yoshiyuki Teratani、Tomohiro Ando、Hideaki Tsuchiya、Tanroku Miyoshi (1.Kobe University, Depaltment of Electrical and Electronics Engineering)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-4] Development of Electric Conductivity Simulator Based on Tight-Binding Quantum Chemical Molecular Dynamics

Hideyuki Tsuboi、Hiroshi Setogawa、Michihisa Koyama、Akira Endou、Momoji Kubo、Ewa Bloclawik、Akira Miyamoto (1.Department of Applied Chemistry, Graduate School of Engineering, Tohoku University、2.Institute of Fluid Science, Tohoku University、3.PRESTO, Japan Science and Technology Agency、4.New Industry Creation Hatchery Center, Tohoku University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-1] Perspective on Emerging Devices and their Impact on Scaling Technologies

S. Biesemans (1.IMEC)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-2] Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate

Kazuhiko Endo、Meishoku Masahara、Yongxun Liu、Takashi Matsukawa、Kenichi Ishii、Etsurou Sugimata、Hidenori Takashima、Hiromi Yamauchi、Eiichi Suzuki (1.National Institute of Advanced Industrial Science and Technology (AIST))

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-3] A Surrounding-Gate Transistor with Multi-Pillar Silicon Channels

Jaekwan Park、Jason C. S. Woo (1.Department of Electrical Engineering, University of California)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-4] Analytical model for subband engineering in undoped double gate MOSFETs

M. Ferrier、R. Clerc、G. Pananakakis、G. Ghibaudo、F. Boeuf、T. Skotnicki (1.IMEP、2.STMicroelectronics)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-1] MOSFET Harmonic Distortion up to the Cutoff Frequency: Measurement and Theoretical Analysis

Youichi Takeda、Dondee Navarro、Shingo Chiba、Tatsuya Ezaki、Mitiko Miura-Mattausch、Hans Jurgen Mattausch、Tatsuya Ohguro、Takahiro Iizuka、Masahiko Taguchi、Shigetaka Kumashiro、Shunsuke Miyamoto (1.Graduate School of Advanced Sciences of Matter、2.Research Center for Nanodevices and Systems, Hiroshima University、3.Semiconductor Technology Academic Research Center)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード