[F-7-4] Investigation of FePt Nano-Dots Fabricated by Self-Assembled Nano-Dot Deposition Method Using X-ray Photoelectron Spectroscopy

M. Murugesan、J. C. Bea、C.-K. Yin、H. Nohira、E. Ikenaga、T. Hattori、M. Nishijima、T. Fukushima、T. Tanaka、M. Miyao、M. Koyanagi (1.Japan Sci. and Technol. Agency (JST)、2.Tohoku Univ., Dept. of Bio-Engg. and Robotics、3.Musashi Inst. Technol., Dept. of Electrical and Electronics Engg.、4.JASRI/SPring-8、5.Musashi Inst. Technol., Res. Ctr. Silicon Nano Sci.、6.Tohoku Univ., Inst. for Materials Res.、7.Kyushu Univ., Dept. of Electronics)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-9-1] Advanced Characterization of High-k Gate Stack by Internal Photo Emission (IPE): Interfacial Dipole and Band Diagram in Al/Hf(Si)O2/Si MOS Structure

Julie Widiez、Koji Kita、Tomonori Nishimura、Akira Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-9-2] Characterization of the Sc2O3/La2O3 High-κ Gate Stack by STM

Y. C. Ong、D. S. Ang、S. J. O’Shea、K. L. Pey、T. Kawanago、K. Kakushima、H. Iwai (1.School of Electrical and Electronic Engineering, Nanyang Technological University、2.Insititute of Material Research and Engineering、3.Frontier Collaborative Research Center, Tokyo Institute of Technology)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-9-3] Origin of Structural Phase Transformation of SiO2-doped HfO2

Kazuyuki Tomida、Koji Kita、Akira Toriumi (1.Department of Materials Engineering, School of Engineering, The University of Tokyo、2.Research Fellow of the Japan Society for the Promotion of Science)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-9-4] Characteristics of Pure Ge3N4 Dielectric Layers Formed by High-Density Plasma Nitridation

Katsuhiro Kutsuki、Gaku Okamoto、Takuji Hosoi、Takayoshi Shimura、Kiyoshi Yasutake、Heiji Watanabe (1.Graduate School of Engineering, Osaka University)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-9-5] Surface Treatment of Ge(001) Surface by Radical Nitridation.

Hiroki Kondo、Misato Fujita、Akira Sakai、Masaki Ogawa、Shigeaki Zaima (1.Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University、2.EcoTopia Science Institute, Nagoya University、3.Present affiliation: Department of Systems Innovation, Graduate School of Engineering Science, Osaka University)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-10-1] Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System

Osamu Nakatsuka、Atsushi Suzuki、Shingo Akimoto、Akira Sakai、Masaki Ogawa、Shigeaki Zaima (1.Graduate School of Engineering, Nagoya University、2.EcoTopia Science Institute, Nagoya University)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-10-2] A Breakthrough Electronic Lithography Process Through Si Layer for Self Aligning Gates in Planar Double-Gate Transistors for 32nm Node And Below

R. Wacquez、P. Coronel、MP. Samson、D. Delille、LR. Clement、V. Delaye、L. Baud、N. Loubet、J. Bustos、A. Pouydebasque、B. Guillaumot、T. Ernst、P. Masson、JP. Gouy、T. Skotnicki (1.ST Microelectronics、2.NXP 850 rue J.Monnet、3.CEA/Leti Minatec、4.L2MP)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-10-3] Contact Technology employing Nickel-Platinum Germanosilicide Alloys for P-Channel FinFETs with Silicon-Germanium Source and Drain Stressors

Rinus Tek-Po Lee、Kian-Ming Tan、Andy Eu-Jin Lim、Tsung-Yang Liow、Xu-Chu Chen、Ming Zhu、Alvin Tian-Yi Koh、Keat Mun Hoe、Shue-Yin Chow、Guo-Qiang Lo、Ganesh S. Samudra、Dong-Zhi Chi、Yee-Chia Yeo (1.Silicon Nano Device Lab., Dept. of Electrical and Computer Engineering, National University of Singapore、2.Agency for Science Technology and Research, Institute of Materials Research and Engineering、3.Agency for Science Technology and Research, Institute of Microelectronics)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-10-4] An Optimized Silicidation Technique for Source and Drain of FINFET

Kiyoshi Okuyama、Atsushi Sugimura、Hideo Sunami (1.Research Center for Nanodevice and Systems, Hiroshima University)

2007 International Conference on Solid State Devices and Materials |PDF ダウンロード