[A-3-1] Dopant and Potential Profiling with Atomic Resolution by Scanning Tunneling Microscopy (Invited)

T. Kanayama¹, M. Nishizawa¹, L. Bolotov¹ (1.MIRAI-AIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-3-2] 1-nm Spatial Resolution in Carrier Mapping of Ultra-Shallow Junctions by Scanning Spreading Resistance Microscopy

L. Zhang¹, H. Tanimoto¹, K. Adachi¹, N. Yasutake¹, A. Nishiyama¹ (1.Toshiba Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-3-3] Carrier Density Mapping of Small n-MOSFET Devices by Vacuum-gap Modulation Scanning Tunneling Spectroscopy

L. Bolotov¹, M. Nishizawa¹, T. Kanayama¹ (1.MIRAI-AIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-3-4] Trap Generation in Sc₂O₃/La₂O₃ High-κ Gate Stack by Nanoscale Electrical Stress

Y. C. Ong¹, D. S. Ang¹, S. J. O'Shea², K. L. Pey¹, C. H. Tung³, T. Kawanago⁴, K. Kakushima⁴, H. Iwai⁴ (1.Nanyang Tech. Univ., 2.Inst. of Materials Res. and Eng., 3.Inst. of Microelectronics, Singapore, 4.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-5-1] Defect Profiling and the Role of Nitrogen in Lanthanum Oxide-capped High-κ Dielectrics for nMOS Applications

B. J. O'Sullivan¹, R. Mitsuhashi², H. Okawa², N. Sengoku², T. Schram¹, G. Groeseneken^1,3, S. Biesemans¹, T. Nakabayashi², A. Ikeda², M. Niwa² (1.IMEC, Belgium, 2.Matsushita Electric Co., Ltd., Japan, 3.Katholieke Univ., Belgium)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-5-2] Chemical Bonding-Induced Dipole at the HfO₂/Si Interface

N. Miyata^1,2, Y. Abe^1,2, T. Yasuda¹ (1.AIST, 2.Musashi Inst. of Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-5-3] Photoemission Study of Chemical Bonding Features and Electronic States of Ultrathin HfTi_xO_y/Pt System

A. Ohta¹, H. Murakami¹, S. Higashi¹, S. Miyazaki¹, M. Tanioku², M. Horikawa², A. Ogishima² (1.Hiroshima Univ., 2.Elpida Memory Inc., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-6-1] Self-limiting Growth Behavior of Epitaxial NiSi₂ and its Impact on Controlled Silicidation of Metal Source/Drain in Silicon Nanowire MOSFETs

S. Migita¹, Y. Morita¹, N. Taoka¹, W. Mizubayashi¹, H. Ota¹ (1.AIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-6-2] Low Temperature Phosphorus Segregation at NiGe/Ge Interface by "Snowplow" Effect

T. Nishimura¹, S. Sakata¹, K. Nagashio¹, K. Kita¹, A. Toriumi¹ (1.Univ. of Tokyo, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[A-6-3] Formation of Low Resistive S/D-Extension using Carborane Molecular Ion Implantation for Sub-45-nm PMOSFET

S. Endo¹, Y. Kawasaki¹, T. Yamashita¹, H. Oda¹, Y. Inoue¹ (1.Renesas Tech. Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

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