[J-1-4] A Novel Multi-Fin DRAM Periphery Transistor Technology using a Spacer Transfer through Gate Polysilicon Technique

M. Yoshida¹, K. Kim¹, J. Kahng¹, C. Lee¹, H. Sung¹, K. H. Jung¹, J. S. Moon¹, W. Yang¹, K. S. Oh¹ (1.Samsung Electronics Co., Ltd., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-1-5] Electrical Characteristics of TiO₂/Al₂O₃/TiO₂ Stacked Films

H. Hara¹, M. Tanioku², M. Yamato¹, T. Kikkawa¹ (1.Hiroshima Univ., 2.Elpida Memory, Inc., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-1-6] Properties of Al₂O₃/Nb₂O₅ and Ta₂O₅/Nb₂O₅ Stacked and Mixed Films for Gigabit DRAM Capacitor

M. Yamato¹, M. Tanioku², H. Hara¹, T. Kikkawa¹ (1.Hiroshima Univ., 2.Elpida Memory, Inc., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-2-1] Impact of Random Telegraph Noise (RTN) on Future Memory (Invited)

H. Miki¹ (1.Hitachi, Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-2-2] Distributed-cycling Effects for Data Retention Characteristics of Flash Memories

N. Matsukawa¹, T. Funatsu¹, R. Abe¹ (1.Toshiba Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-2-3] Improving Read Disturb Characteristics by Self-boosting Read Scheme for MLC NAND Flash Memories

M. Kang¹, K. T. Park¹, D. Kim¹, S. Hwang¹, B. Y. Choi¹, Y. Song², Y. T. Lee¹, C. Kim¹ (1.Samsung Electronics Co., Ltd., 2.Hanyang Univ., Korea)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-2-4] A Study on Scaling Limit of Programming Characteristics of NOR-Flash Memories using Device Simulation

T. Ishihara¹, T. Marukame¹, K. Matsuzawa¹, T. Nakauchi¹ (1.Toshiba Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-2-5] Memory Characterization of MOS Memory Device with High Density Self-Assembled Tungsten Nanodots Floating Gate and HfO₂ Blocking Dielectric

Y. Pei¹, M. Nishijima¹, T. Fukushima¹, T. Tanaka¹, M. Koyanagi¹ (1.Tohoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-2-6] Temperature Effects on Recrystallization and Improvements of Pure Gadolinium (Gd) Nanocrystal (NC) for Flash Memory

Y. K. Chen¹, C. S. Lai¹, J. C. Wang², P. C. Chou¹, C. T. Lin¹, Y. C. Fang³, L. Hsu³, C. P. Liu⁴, R. S. Huang⁴ (1.Chang Gung Univ., 2.Nanya Tech. Corp., 3.Chung Shan Inst. of Sci. and Tech., 4.National Cheng Kung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[J-5-1] Three Dimensional Flash Memory with Bit Cost Scalable Technology for the Future Ultra High Density Storage Devices (Invited)

H. Aochi¹, M. Kito¹, Y. Fukuzumi¹, M. Kido¹, H. Tanaka¹, Y. Matsuoka¹, Y. Komori¹, M. Ishiduki¹, Y. Nagata², R. Katsumata¹, Y. Iwata¹, A. Nitayama¹ (1.Toshiba Corp., 2.Toshiba Information Systems Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

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