[P-1-1] Atomic-Scale Simulation of Si Etching by Energetic Br⁺ and Br₂⁺ Ions for the Analysis of Gate- or STI- Etching Processes

T. Nagaoka¹, H. Ohta¹, K. Eriguchi¹, K. Ono¹ (1.Kyoto Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-2] Thermal Stability and Scalability of Mictamict Ti-Si-N MOS Gate Electrodes

H. Kondo¹, K. Furumai¹, M. Sakashita¹, A. Sakai², M. Ogawa¹, S. Zaima¹ (1.Nagoya Univ., 2.Osaka Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-3] New Observation on PBTI Characteristics of Contact Etching Stop Layer (CESL) Induced Tensile Strained HfO₂ nMOSFET

W. C. Wu¹, T. S. Chao¹, T. H. Chiu¹, C. S. Lai², J. C. Wang³, M. W. Ma¹, W. C. Lo¹ (1.National Chiao Tung Univ., 2.Chang Gung Univ., 3.Nanya Tech. Corp., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-4] Low Temperature, Anisotropic, Lattice-Plane-Free and Damage-free Oxidation for 3 Dimensional Structure by Oxygen Neutral Beams

M. Yonemoto¹, K. Sano¹, K. Endo², T. Matsukawa², M. Masahara², S. Samukawa¹ (1.Tohoku Univ., 2.AIST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-5] Improving Hf-based High-k/Metal Gate n-MOSFET Performances with Gadolinium Cap Layer

C. W. Hsu¹, Y. K. Fang¹, W. K. Yeh², J. Y. Chen², C. T. Lin³, C. H. Hsu³, L. W. Cheng³, C. M. Lai³ (1.National Cheng Kung Univ., 2.National Univ. of Kaohsiung, 3.UMC, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-6] Interfacial and Electrical Characterization of ALD HfSiON Gated MOSFETs with Different Compositions after Channel Hot-Carrier Stress

H. W. Chen¹, S. Y. Chen¹, C. C. Lu¹, C. H. Liu², F. C. Chiu², H. S. Huang¹, L. W. Cheng³, C. T. Lin³, G. H. Ma³, S. W. Sun³ (1.National Taipei Univ. of Tech., 2.Ming Chuan Univ., 3.UMC, Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-7] Low-Temperature Polycrystalline Silicon Thin-Film-Transistor with Fluorinated High-k HfO₂ Gate Dielectrics by HF Dip and CF₄ Plasma

C. W. Chen¹, C. S. Lai¹ (1.Chang Gung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-8] Interfacial and Electrical Characterization in MOSFETs with CeO₂ Gate Dielectric

F. C. Chiu¹, H. W. Chen², C. H. Chen³, C. H. Liu¹, S. Y. Chen², B. S. Huang², H. S. Huang², H. L. Hwang³ (1.Ming Chuan Univ., 2.National Taipei Univ. of Tech., 3.National Tsing-Hua Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-9] Drain Bias Dependent Model of Si-H Bond Dissociation for NBTI Characteristics of pMOSFETs

J. Yang¹, L. Huang¹, J. Pan¹, X. Liu¹, R. Han¹, J. Kang¹, Z. H. Gan², M. Liao², C. C. Liao², H. M. Wu² (1.Peking Univ., 2.Semiconductor Manufacturing International Corp., China)

2008 International Conference on Solid State Devices and Materials |PDF Download

[P-1-10] Implantation through HfO₂: Calibration of Simulation and Study on Hf Behavior during Implant

J. Bhandari^1,2, P. Rivallin¹, M. Vinet¹, T. Poiroux¹, J. P. Barnes¹, B. Previtali¹, S. Deleonibus¹, A. M. Ionescu² (1.CEA-LETI/MINATEC, France, 2.Ecole Polytechnique Fédérale de Lausanne, Switzerland)

2008 International Conference on Solid State Devices and Materials |PDF Download

587 results (411 - 420)

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