[G-9-1] Light Weight High Efficiency III-V Solar Cells using Epitaxial Lift Off(ELO) (Invited)

N. Pan¹、R. Tatavarti¹、G. Hillier¹、C. Youtsey¹、G. Martin¹、A. Wibowo¹、R. Navaratnarajah¹、F. Tuminello¹、M. Disabb¹ (1.MicroLink Devices, USA)

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[G-9-2] Synchrotron Radiation Photoemission Spectroscopic Study of Band Offsets and Interfacial Self-cleaning Mechanism in Atomic Layer Deposited HfO₂ on InGaAs and InAlAs

M. Kobayashi¹、P. T. Chen¹、S. Sun²、N. Goel³、M. Garner³、W. Tsai³、P. Pianetta²、Y. Nishi¹ (1.Stanford Univ.、2.Stanford Synchrotron Radiation Lab.、3.Intel Corp., USA)

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[G-9-3] Realizing High Quality Metal-Gate/High-Permittivity Dielectric Stack on Indium Gallium Arsenide by Vacuum Annealing and Silane Treatment

H. C. Chin¹、B. Wang²、P. C. Lim²、L. J. Tang³、C. H. Tung³、Y. C. Yeo¹ (1.National Univ. of Singapore、2.Inst. of Materials Res. and Eng.、3.Inst. of Microelectronics, Singapore)

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[G-9-4] Fabrication of III-V MOS Structure by using Selective Oxidation of InAlAs

S. Nakagawa¹、M. Yokoyama¹、O. Ichikawa²、M. Hata²、M. Tanaka¹、M. Takenaka¹、S. Takagi¹ (1.Univ. of Tokyo、2.Sumitomo Chemical Co., Ltd.)

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[G-9-5] Improved Electrical Characteristics of Atomic-layer-deposited Al₂O₃/GaAs MOS Capacitors with (NH₄)₂S-C₄H₉OH Sulfide Treatment

H. C. Chiang¹、C. H. Chien^1,2、C. C. Cheng¹、C. L. Lin¹、C. S. Chen¹、G. L. Luo²、Y. L. Shen²、C. C. Kei³、C. N. Hsiao³ (1.National Chiao Tung Univ.、2.National Nano Device Lab.、3.National Applied Res. Lab., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード