[F-10-1] Magnetic Domain Wall Dynamics in (Ga,Mn)As (Invited)

F. Matsukura¹ (1.Tohoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-10-2] Spin-dependent Resonant Tunneling in III-V-based Ferromagnetic-Semiconductor Quantum Heterostructures (Invited)

S. Ohya^1,2 (1.Univ. of Tokyo、2.PRESTO-JST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-10-3] Coherent Spin Conduction in Multilayer Graphene

H. Goto^1,2、A. Kanda^1,2、T. Sato¹、S. Tanaka¹、Y. Ootuka¹、S. Odaka^3,4、H. Miyazaki^2,3、K. Tsukagoshi^2,3、Y. Aoyagi^2,4 (1.Univ. of Tsukuba、2.CREST-JST、3.AIST、4.Tokyo Tech., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-1] GaN on Silicon RF Devices: Current Status and Future Directions (Invited)

K. Linthicum¹、A. Hanson¹、E. Piner¹、A. Chaudhari¹、T. Nichols¹、W. Johnson²、I. Kizilyalli² (1.Nitronex Corp.、2.Alta Devices Inc., USA)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-2] AlGaN/GaN/AlGaN Double Heterostructures on 4 inch Si Substrates for High Breakdown Voltage Field-Effect Transistors with Low On-Resistance

D. Visalli^1,2、J. Derluyn¹、S. Degroote¹、M. Leys¹、K. Cheng^1,2、M. Germain¹、M. Van Hove¹、G. Borghs^1,2 (1.IMEC、2.Katholieke Univ. Leuven, Belgium)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-3] Mesa-gate AlGaN/GaN HEMTs having Narrow-width Channels

K. Ohi¹、T. Tamura¹、J. Kotani¹、T. Hashizume¹ (1.Hokkaido Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-4] Device Characteristics of MOCVD-Grown InAlN/GaN HEMTs on AlN/Sapphire Template

J. Selvaraj¹、L. Selvaraj¹、M. Miyoshi²、Y. Kuraoka²、M. Tanaka²、T. Egawa¹ (1.Nagoya Inst. of Tech.、2.NGK Insulators Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-5] Gate Recessed AlGaN/GaN based Normally-Off HEMTs for High Frequency Operation

S. Maroldt¹、C. Haupt¹、W. Pletschen¹、S. Müller¹、R. Quay¹、O. Ambacher¹ (1.IAF, Germany)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-6] High-frequency Characteristics and Effective Saturation Electron Velocity of AlGaN/GaN Heterojunction Field Effect Transistors with AlN or SiN Passivation

N. Tanaka¹、Y. Sumida²、H. Kawai²、T. Suzuki¹ (1.JAIST、2.POWDEC K. K., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[G-1-7] Improved Microwave Performance of AlGaN/GaN MOS-HEMT with Stack Gate HfO₂/Al₂O₃ Structure

Y. Z. Yue¹、Y. Hao¹、J. C. Zhang¹ (1.Xidian Univ., China)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

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