[J-1-4] A Novel Multi-Fin DRAM Periphery Transistor Technology using a Spacer Transfer through Gate Polysilicon Technique

M. Yoshida¹、K. Kim¹、J. Kahng¹、C. Lee¹、H. Sung¹、K. H. Jung¹、J. S. Moon¹、W. Yang¹、K. S. Oh¹ (1.Samsung Electronics Co., Ltd., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-1-5] Electrical Characteristics of TiO₂/Al₂O₃/TiO₂ Stacked Films

H. Hara¹、M. Tanioku²、M. Yamato¹、T. Kikkawa¹ (1.Hiroshima Univ.、2.Elpida Memory, Inc., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-1-6] Properties of Al₂O₃/Nb₂O₅ and Ta₂O₅/Nb₂O₅ Stacked and Mixed Films for Gigabit DRAM Capacitor

M. Yamato¹、M. Tanioku²、H. Hara¹、T. Kikkawa¹ (1.Hiroshima Univ.、2.Elpida Memory, Inc., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-1] Impact of Random Telegraph Noise (RTN) on Future Memory (Invited)

H. Miki¹ (1.Hitachi, Ltd., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-2] Distributed-cycling Effects for Data Retention Characteristics of Flash Memories

N. Matsukawa¹、T. Funatsu¹、R. Abe¹ (1.Toshiba Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-3] Improving Read Disturb Characteristics by Self-boosting Read Scheme for MLC NAND Flash Memories

M. Kang¹、K. T. Park¹、D. Kim¹、S. Hwang¹、B. Y. Choi¹、Y. Song²、Y. T. Lee¹、C. Kim¹ (1.Samsung Electronics Co., Ltd.、2.Hanyang Univ., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-4] A Study on Scaling Limit of Programming Characteristics of NOR-Flash Memories using Device Simulation

T. Ishihara¹、T. Marukame¹、K. Matsuzawa¹、T. Nakauchi¹ (1.Toshiba Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-5] Memory Characterization of MOS Memory Device with High Density Self-Assembled Tungsten Nanodots Floating Gate and HfO₂ Blocking Dielectric

Y. Pei¹、M. Nishijima¹、T. Fukushima¹、T. Tanaka¹、M. Koyanagi¹ (1.Tohoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-2-6] Temperature Effects on Recrystallization and Improvements of Pure Gadolinium (Gd) Nanocrystal (NC) for Flash Memory

Y. K. Chen¹、C. S. Lai¹、J. C. Wang²、P. C. Chou¹、C. T. Lin¹、Y. C. Fang³、L. Hsu³、C. P. Liu⁴、R. S. Huang⁴ (1.Chang Gung Univ.、2.Nanya Tech. Corp.、3.Chung Shan Inst. of Sci. and Tech.、4.National Cheng Kung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-5-1] Three Dimensional Flash Memory with Bit Cost Scalable Technology for the Future Ultra High Density Storage Devices (Invited)

H. Aochi¹、M. Kito¹、Y. Fukuzumi¹、M. Kido¹、H. Tanaka¹、Y. Matsuoka¹、Y. Komori¹、M. Ishiduki¹、Y. Nagata²、R. Katsumata¹、Y. Iwata¹、A. Nitayama¹ (1.Toshiba Corp.、2.Toshiba Information Systems Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

587件中(381 - 390)

« 前へ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
次へ »

▲