[J-5-2] Low Temperature GAA Poly-Si Nanowire TFT SONOS Memory for MLC Application

J. Fu^1,2、Y. Jiang^1,2、N. Singh¹、C. X. Zhu^1,2、G. Q. Lo¹、N. Balasubramanian¹、D. L. Kwong¹ (1.Inst. of Microelectronics、2.National Univ. of Singapore, Singapore)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-5-3] Multi-Gate Metal Nano-crystal Memories with TiN Nano-crystals, High-k Blocking Dielectric and High Work Function Gate Electrode

C. P. Lu¹、C. K. Luo¹、B. Y. Tsui¹、C. H. Lin²、P. J. Tzeng²、C. C. Wang²、M. J. Tsai² (1.National Chiao Tung Univ.、2.Industrial Tech. Res. Inst., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-1] Numerical Simulation of the Read Disturb Behavior on the ONO Scaling Margin in SONOS Flash Memory

C. H. Lee^1,2、C. W. Wu¹、S. W. Lin¹、T. H. Yeh¹、S. H. Gu¹、K. F. Chen¹、Y. J. Chen¹、J. Y. Hsieh¹、I. J. Huang¹、N. K. Zous¹、T. T. Han¹、M. S. Chen¹、W. P. Lu¹、K. C. Chen¹、T. Wang^1,2、C. Y. Lu¹ (1.Macronix International Co., Ltd、2.National Chiao Tung Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-2] A Low Voltage Programming Scheme Feasible for 2-Bit Operation of SONOS Flash Memory with Excellent Data Retention

J. H. Kuo¹、S. S. Chung¹、Y. H. Tseng²、C. S. Lai²、Y. Y. Hsu³、E. Ho³、T. Chen³、L. C. Peng³、C. H. Chu³ (1.National Chiao Tung Univ.、2.Chang Gung Univ.、3.ProMOS Tech. Inc., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-3] A New Embedded NVM Thin Film Cell for Low Voltage Applications

G. Bossu^1,2、A. Demolliens^1,2、S. Puget^1,2、P. Masson³、J. M. Portal²、R. Bouchakour²、P. Mazoyer¹、T. Skotnicki¹ (1.STMicroelectronics、2.IM2NP、3.Univ. de Nice-Sophia Antipolis, France)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-6-4] New Charge Pumping Method for Extraction of Nitride Trap Energy Distribution in SONOS Flash Memory

W. H. Choi¹、S. S. Park¹、I. S. Han¹、H. M. Kwon¹、O. S. Yoo¹、M. K. Na¹、K. I. Choi¹、D. H. Nam¹、J. C. Om²、S. S. Lee²、H. S. Joo²、H. D. Lee¹、G. W. Lee¹ (1.Chungnam National Univ.、2.Hynix Semiconductor Inc., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-1] Enhanced Memory Performances of Advanced Impurity Trap Memory with Atomic-scale Ti Impurity Embedded in Ultrathin LaAlO₃ as a Charge Trap Layer

S. Jung¹、H. Choi¹、Y. Ju¹、M. Chang¹、M. Pyun¹、H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-2] Study of Fluorine Incorporation in the Blocking Oxide of Metal-Alumina-Nitride-Oxide-Silicon-type Flash Memory Devices

M. Chang¹、J. Lee¹、Y. Ju¹、S. Jung¹、H. Choi¹、H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-3] Effect of High Pressure Oxygen Annealing (HPOA) on the Electrical Characteristics of Metal-Alumina-Nitride-Oxide-Silicon (MANOS)-type Flash Memory Devices

Y. Ju¹、M. Chang¹、S. Jung¹、M. Jo¹、J. Lee¹、J. Yoon¹、H. Hwang¹ (1.Gwangju Inst. of Sci. and Tech., Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[J-7-4] Multi-Level-Storage in Lateral SbTeN-based Phase-Change Memory with an Additional Top TiN Layer

Y. Yin¹、K. Ota¹、T. Noguchi¹、H. Sone¹、S. Hosaka¹ (1.Gunma Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード