[H-7-1] Spin Transport in a Single InAs Quantum Dot Attached to Ferromagnetic Electrodes (Invited)

T. Machida^1,2、K. Hamaya^1,3 (1.Univ. of Tokyo、2.CREST-JST、3.Kyushu Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-7-2] Hyperfine-coupling-programming of Current Through Coupled Quantum Dots with Multiple-sweep Bias Voltage Waveforms

G. Austing^1,2、C. Payette^1,2、G. Yu¹、J. Gupta¹ (1.National Res. Council of Canada、2.McGill Univ., Canada)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-7-3] High-frequency Capacitance Measurements in GaAs/AlGaAs Quantum Dots

T. Ota¹、T. Hayashi¹、T. Fujisawa¹ (1.NTT Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-7-4] Tunneling Spectroscopy of Germanium Quantum-dot in Single-hole Transistors with Self-aligned Electrodes

W. T. Lai¹、C. C. Chen¹、D. M. T. Kuo¹、P. W. Li¹ (1.National Central Univ., Taiwan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-7-5] Implementation of Petri Net using Single-Electron Devices

W. C. Zhang¹、N. J. Wu¹ (1.Chinese Academy of Sci., China)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-8-1] Spin Blockade and Lifetime Enhanced Transport in a Silicon/Silicon-Germanium Double-Quantum Dot (Invited)

M. A. Eriksson¹、C. B. Simmons¹、N. Shaji¹、M. Thalakulam¹、E. K. Sackmann¹、B. J. Van Bael¹、D. E. Savage¹、M. G. Lagally¹、R. Joynt¹、M. Friesen¹、R. H. Blick¹、A. J. Rimberg¹、S. N. Coppersmith¹ (1.Univ. of Wisconsin-Madison, USA)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-8-2] Single-Electron Transfer by Controlling the Dopant-Induced Quantum Dot Landscape

D. Moraru¹、K. Yokoi¹、M. Ligowski¹、M. Tabe¹ (1.Shizuoka Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-8-3] Silicon Radio Frequency Single-electron Transistors Operating at above 4.2 K

M. Manoharan¹、Y. Tsuchiya^1,2,3、S. Oda^1,3、H. Mizuta^1,2,3 (1.Tokyo Tech., Japan、2.Univ. of Southampton, UK、3.SORST-JST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-8-4] Silicon based Technology for Single Dopant Orbital Transistor

R. Wacquez^1,2、M. Sanquer¹、M. Vinet²、X. Jehl¹、M. Pierre¹、S. Pauliac-Vaujour²、G. Molas²、T. Poiroux²、G. Guegan²、S. Deleonibus²、D. Kern³ (1.CEA-INAC、2.CEA-LETI/MINATEC, France、3.Tübingen Univ., Germany)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[H-8-5] Dopant Freeze-out and Potential Fluctuations Observed by Low Temperature Kelvin Probe Force Microscope

M. Ligowski^1,2、M. Anwar¹、D. Moraru¹、R. Jablonski²、M. Tabe¹ (1.Shizuoka Univ., Japan、2.Warsaw Univ. of Tech., Poland)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

587件中(311 - 320)

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