[C-3-5] A Fundamental Study Toward the Realization of an SPRAM-based Low Power FPGA

M. Sekikawa¹、K. Kiyoyama¹、T. Fukushima¹、T. Tanaka¹、M. Koyanagi¹ (1.Tohoku Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-6] Fabrication of a Standby-Power-Free TMR-based Nonvolatile Memory-in-Logic Circuit Chip with a Spin-Injection Write Scheme

S. Matsunaga¹、J. Hayakawa²、S. Ikeda¹、K. Miura²、T. Endoh¹、H. Ohno¹、T. Hanyu¹ (1.Tohoku Univ.、2.Hitachi Advanced Res. Lab., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-5-1] Molecular Dynamics Simulations of Low-k SiOCH Film Etching by Fluorocarbon Plasmas

A. Suzuki¹、M. Isobe¹、S. Kobayashi²、M. Fukasawa²、T. Tatsumi²、S. Hamaguchi¹ (1.Osaka Univ.、2.Sony Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-5-2] Low-k Film Damage-Resistant CO Chemistry-based Ash Process for Low-k/Cu Interconnection in Flash Memory Devices

J. Lee¹、W. Park¹、D. H. Kim¹、K. Shin¹、J. Choi¹、I. Chung² (1.Samsung Electronics Co., Ltd.、2.Univ. of Sungkyunkwan, Korea)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-5-3] Plasma Physics for Reducing PID in Nano-structure Patternings (Invited)

T. Makabe¹、T. Ohba¹、T. Yagisawa¹ (1.Keio Univ., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-1] Diagnostics of Plasma Induced Damages on Low-k SiOCH Films

S. Takashima¹、R. Saito¹、S. Uchida¹、K. Takeda¹、M. Fukasawa²、K. Oshima²、K. Nagahata²、T. Tatsumi²、M. Hori^1,3 (1.Nagoya Univ.、2.Sony Corp.、3.CREST-JST, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-2] Electrical Reliabilities of Highly Cross-Linked Porous Silica Film

Y. Kayaba¹、K. Kohmura²、H. Tanaka²、K. Kinoshita³、S. Chikaki³、T. Kikkawa¹ (1.Hiroshima Univ.、2.Mitsui Chemicals, Inc.、3.Selete, Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-3] Low-k Impact on Circuit Performance Demonstrated in High-Speed LSIs

M. Tada²、N. Inoue¹、J. Kawahara¹、H. Yamamoto¹、F. Ito¹、T. Fukai¹、M. Ueki¹、S. Miyake¹、T. Takeuchi¹、S. Saito¹、M. Tagami¹、N. Furutake¹、K. Hijioka¹、T. Ito¹、Y. Shibue¹、T. Senou¹、R. Ikeda¹、N. Okada¹、Y. Hayashi¹ (1.NEC Electronics Corp.、2.NEC Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-6-4] Dielectric Reliability of 50 nm 1/2 Pitch Structures in Aurora^® LK

S. Demuynck¹、H. G. Kim²、C. Huffman¹、M. Darnon¹、H. Struyf¹、J. Versluijs¹、M. Claes¹、G. Vereecke¹、P. Verdonck¹、H. Volders¹、N. Heylen¹、K. Kellens¹、D. De Roest³、H. Sprey³、G. P. Beyer¹ (1.IMEC, Belgium、2.Samsung Electronics Co., Ltd., Korea、3.ASM, Belgium)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-7-1] Low-Loss Magnetic Films of Ni-Zn Ferrite by Low-Temperature PVD Method for RF-CMOS Application

K. Kaneko¹、N. Inoue¹、N. Furutake¹、K. Hijioka¹、Y. Hayashi¹ (1.NEC Electronics Corp., Japan)

2008 International Conference on Solid State Devices and Materials |PDF ダウンロード

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