[E-8-4] Effects of Nitrided-InGaAs Interfacial Layers formed by ECR nitrogen plasma on Al₂O₃/InGaAs MOS Properties

T. Hoshii¹, S. Lee², R. Suzuki¹, N. Taoka¹, M. Yokoyama¹, H. Yamada², W. Jevasuwan³, M. Hata², T. Yasuda³, M. Takenaka¹, S. Takagi¹ (1.Univ. of Tokyo, 2.Sumitomo Chemical Co., Ltd., 3.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-8-5] Controlling anion composition at MIS interfaces on III-V channels by plasma processing

W. Jevasuwan¹, Y. Urabe¹, T. Maeda¹, N. Miyata¹, T. Yasuda¹, A. Ohtake², H. Yamada³, M. Hata³, S. Lee⁴, T. Hoshii⁴, M. Takenaka⁴, S. Takagi⁴ (1.AIST, 2.NIMS, 3.Sumitomo Chemical Co., Ltd., 4.Univ. of Tokyo , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-8-6] Formation of Ultra-thin and Uniform Ni-InGaAs Alloyed Contact for Scaled Metal S/D InGaAs MOSFETs

T. Irisawa¹, M. Oda¹, T. Tezuka¹ (1.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-9-1] Silicon-On-Insulator Fabrication Using Si/HfO₂/Si Epitaxial Structure

S. Migita¹, H. Ota¹ (1.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-9-2] Enabling epitaxy on ultrathin implanted SOI

L. Grenouillet¹, N. Possémé¹, S. Ponoth², N. Loubet³, V. Destefanis¹, Y. Le Tiec¹, S. Mehta², A. Kumar², Q. Liu³, B. Haran², K. Cheng², N. Berliner², J. Fullam², J. Kuss², G. Shahidi², O. Faynot¹, B. Doris², M. Vinet¹ (1.CEA-LETI , FRANCE, 2.IBM, 3.STMicroelectronics , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-9-3] Performance and Variability Comparisons between ALD- and PVD-TiN Gate FinFET

T. Hayashida^1,2, K. Endo³, Y. X. Liu³, S. O'uchi³, T. Matsukawa³, W. Mizubayashi³, S. Migita³, Y. Morita³, H. Ota³, H. Hashiguchi¹, D. Kosemura¹, T. Kamei¹, J. Tsukada³, Y. Ishikawa³, H. Yamauchi³, A. Ogura¹, M. Masahara^1,3 (1.Meiji Univ., 2.JSPS, 3.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[E-9-4L] Extremely scaled (~0.2 nm) equivalent oxide thickness of higher-k ALD-HfO₂ gate stacks

Y. Morita¹, S. Migita¹, W. Mizubayashi¹, H. Ota¹ (1.AIST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-1-1] Magnetoresistive Random Access Memory with Spin Transfer Torque Write (Spin RAM) - Present and Future -

H. Ohno¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-1-2] Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM using Spin-Transfer-Torque (STT) MTJs

T. Ohsawa¹, F. Iga¹, S. Ikeda¹, T. Hanyu¹, H. Ohno¹, T. Endoh¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[F-1-3] A Study for Adopting PMOS Memory Cell for 1T1R STT-RAM with Asymmetric Switching Current MTJ

H. Koike¹, T. Endoh¹ (1.Tohoku Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

741 results (191 - 200)

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