Si Quantum Well MOSFETs for Thin InSb Channel Layers

T. Ito¹、A. Kadoda¹、K. Nakayama¹、Y. Yasui¹、M. Mori¹、K. Maezawa¹、E. Miyazaki²、T. Mizutani² (1.Univ. of Toyama、2.Nagoya Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-2-1] Sub-Millimeter-Wave GaN-HEMT Tech.

K. Shinohara¹、D. Regan¹、A. Corrion¹、D. Brown¹、I. Alvarado Rodriguez¹、M. Cunningham¹、C. Butler¹、A. Schmitz¹、S. Kim¹、B. Holden¹、M. Micovic¹ (1.HRL Laboratories , USA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-2-2] A 0.25 μm Gate AlGaN/GaN HEMT for X-band Using RELACS Process

H. Koyama¹、Y. Kamo¹、S. Miwa¹、Y. Yamamoto¹、K. Onoe¹、A. Inoue¹、Y. Hirano¹ (1.Mitsubishi Electric Corp., High Frequency &Optical Device Works , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-2-3] Characteristics of InAlN/GaN Heterostructures Fabricated by Regrowth Technique

M. Hiroki^1,2、N. Watanabe¹、N. Maeda¹、H. Yokoyama¹、K. Kumakura²、H. Yamamoto² (1.Photonics Labs., NTT Corporation、2.Basic Research Labs., NTT Corporation , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-2-4] Improved effective channel electron velocity in AlGaN/GaN HEMTs with sub-100 nm gate-to-drain distance

K. Kodama¹、Y. Naito¹、H. Tokuda¹、M. Kuzuhara¹ (1.Univ. of Fukui , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-2-5] Suppression of off-state drain leakage current in AlGaN channel high electron mo-bility transistors on SiC substrate

T. Nanjo¹、Y. Suzuki¹、A. Imai¹、H. Okazaki¹、M. Suita¹、Y. Abe¹、E. Yagyu¹、H. Ohji¹ (1.Mitsubishi electric Corp. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-2-6L] High Performance Normally Off Nanochannel Al2O3/GaN FinFET

K. S. Im¹、K. W. Kim¹、D. S. Kim¹、H. S. Kang¹、Y. W. Jo¹、R. H. Kim¹、C. H. Won¹、K. I. Jang¹、M. K. Kwon¹、S. M. Jeon¹、D. H. Son¹、Y. M. Kwon¹、J. H. Lee² (1.Kyungpook National Univ.、2.Samsung LED Corp. Ltd. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-3-1] InAs High-Electron Mobility Transistors on the Path to THz Operation

J. A. del Alamo¹、D. H. Kim² (1.Microsystems Tech. Laboratories, MIT, Cambridge,、2.Previously with Teledyne Scientific , USA)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-3-2] High Open Circuit Voltage Gain in Vertical InGaAs Channel Metal-Insulator-Semiconductor Field-Effect Transistor using Heavily Doped Drain Region and Narrow Channel Mesa

M. Kashiwano¹、J. Hirai¹、S. Ikeda¹、M. Fujimatsu¹、Y. Miyamoto¹ (1.Tokyo Tech , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

[F-3-3] 120-GHz-band InP HEMT Amplifier with Gain-Enhanced Topology

M. Sato¹、S. Shiba¹、H. Matsumura¹、Y. Nakasha¹、T. Suzuki¹、N. Hara¹ (1.Fujitsu Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF ダウンロード

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