[N-8-2] Two-component model for threshold voltage shifts of SiC MOSFETs under negative bias stress

M. Matsumura¹、K. Kobayashi¹、Y. Mori¹、N. Tega¹、A. Shima¹、D. Hisamoto¹、Y. Shimamoto¹ (1.Hitachi, Ltd., (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[N-8-3] High-temperature and High-voltage characteristics of Cu/diamond Schottky diodes

K. Ueda¹、K. Kawamoto¹、S. Aichi¹、M. Nishiwaki¹、H. Asano¹ (1.Nagoya Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

M. Kato¹、Y. Mori¹、M. Ichimura¹ (1.Nagoya Inst. of Tech. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

H. Xu^1,2 (1.Lund Univ.、2.Peking Univ. (Sweden))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

S. Sasaki¹、K. Tateno¹、G. Zhang¹、H. Pigot¹、Y. Harada¹、S. Saito¹、A. Fujiwara¹、T. Sogawa¹、K. Muraki¹ (1.NTT Basic Research Labs. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

K. Tomioka^1,2、F. Ishizaka¹、E. Nakai¹、T. Fukui¹ (1.Hokkaido Univ.、2.JST-PRESTO (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

J.H. Hong¹、S.H. Lee¹、Y.R. Kim¹、E.Y. Jeong¹、J.S. Yoon¹、J.S. Lee¹、R.H. Baek²、Y.H. Jeong¹ (1.Pohang Univ. of Tech. and Sci.、2.SEMATECH (Korea))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

Y.B. Zhang¹、L. Sun¹、H. Xu¹、Y.Q. Xia¹、J.W. Han¹、Y. Wang¹、S.D. Zhang¹ (1.Peking Univ. (China))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

T. Zushi^1,3、K. Ohmori²、K. Yamada²、T. Watanabe¹ (1.Waseda Univ.、2.Univ. of Tsukuba、3.JSPS Research Fellow (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

H.M. Yamamoto^1,2 (1.CIMoS, IMS、2.RIKEN (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

540件中(311 - 320)