[N-1-3] Structure of basal plane defects formed by the conversion of threading screw dislocation during solution growth of SiC

S. Harada¹、S.Y. Xiao¹、M. Tagawa¹、Y. Yamamoto¹、S. Arai¹、N. Tanaka¹、T. Ujihara¹ (1.Nagoya Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[N-1-4] Heteroepitaxial growth of diamond films on 3C-SiC(001)/Si substrates by antenna-edge microwave plasma CVD

J. Yaita^1,2、T. Iwasaki^1,2,3、M. Natal⁴、S.E. Saddow⁴、M. Hatano^1,2,3 (1.Tokyo Tech、2.JST-CREST、3.JST-ALCA、4.Univ. of South Florida (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[N-1-5L] α-Ga₂O₃ Schottky barrier diodes fabricated by mist epitaxy technique

M. Oda^1,2、A. Takatsuka¹、T. Hitora¹、J. Kikawa³、K. Kaneko²、S. Fujita² (1.FLOSFIA, INC.、2.Kyoto Univ.、3.Ritsumeikan Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[N-2-1] Challenges to the silicon IGBT limit with PNM structure

M. Sumitomo¹、H. Sakane¹、K. Arakawa¹、Y. Higuchi¹、M. Matsui¹ (1.DENSO Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[N-2-2] Current filamentation caused by dynamic avalanche during turn-off transient under short-circuit operation of IGBTs

T. Kobayashi¹、T. Suwa¹、T. Matsudai²、T. Ogura² (1.Toshiba I.S. Corp.、2.Toshiba Corp. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[N-2-3] Design for EMI suppression during reverse recovery by 600V lateral SOI PiN diode with traps

M. Tsukuda¹、H. Imaki²、I. Omura² (1.The International Centre for the Study of East Asian Development、2.Kyusyu Inst. of Tech. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[N-2-4] An 800V-class lateral NMOS structure with a reduced parasitic capacitance for a level-shift circuit integrated in a high voltage gate driver IC

M. Yamaji¹、A. Jonishi¹、H. Sumida¹、Y. Hashimoto² (1.Fuji Electric Corp. Ltd.、2.Shinshu Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[N-2-5] 250°C Switching Behavior of All SiC Power Module with Sandwich Structure

F. Kato^1,2、R. Simanjorang²、F. Lang²、H. Nakagawa^1,2、H. Yamaguchi^1,2、H. Sato^1,2 (1.AIST、2.R&D Partnership for Future Power Electronics Tech. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[N-2-6] High speed real-time temperature monitoring system inside power devices package using infrared radiation

N. Hirata¹、A. Watanabe¹、I. Omura¹ (1.Kyushu Inst. of Tech. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

[N-8-1] Accurate physical compact models of high-voltage/power semiconductor devices for efficient design of performance-optimized circuits and systems

H.J. Mattausch¹、T. Umeda¹、H. Kikuchihara¹、M. Miura-Mattausch¹ (1.Hiroshima Univ. (Japan))

2014 International Conference on Solid State Devices and Materials |PDF ダウンロード

540件中(301 - 310)

« 前へ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
次へ »

▲