2015 International Conference on Solid State Devices and Materials

2015年9月27日〜 2015年9月30日
Sapporo Convention Center, Sapporo, Japan

検索条件
検索フィルタ

検索条件

フリーワード
タイトル
発表者、著者・共著者
所属

検索条件

設定なし

検索フィルタ

この条件でさらに絞り込みできます。

発表者、著者・共著者

なし

所属

なし

894件中(391 - 400)

« 前へ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
次へ »

[PS-3-17] Comparative Study of Tunnel Field Effect Transistors with Dopant-Segregated Schottky Source/Drain

^○Y. B. Zhang¹, L. Sun¹, H. Xu¹, J. W. Han¹ (1.Peking Univ.(China))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-1] Si-based Nonvolatile Field Effect Transistor using Low Temperature Process

^○Y. Miyata¹, A. Ashida¹, T. Yoshimura¹, N. Fujimura¹ (1.Osaka Prefecture Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-2] Transition Metal Complex Reaction Etching for MRAM Applications using Neutral Beam and Its Mechanism Investigated by First-Principles Calculation

^○T. Kubota¹, Y. Kikuchi^1,2, T. Nozawa², S. Samukawa^1,3 (1.IFS, Tohoku Univ., 2.Tokyo Electron Ltd., 3.WPI-AIMR, Tohoku Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-3] A 16-Level-Cell Memory with 0.24mV/°C Temperature Characteristics Comprising Crystalline In-Ga-Zn Oxide FET

^○T. Matsuzaki¹, T. Onuki¹, S. Nagatsuka¹, H. Inoue¹, T. Ishizu¹, Y. Ieda¹, N. Yamade¹, H. Miyairi¹, M. Sakakura¹, Y. Shionoiri¹, K. Kato¹, T. Okuda¹, KoyamaJ. ¹, Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Corp., Ltd.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-4] High-performance In-Ga-Zn-O TFT Memory with Pt Nanocrystals

^○S. B. Qian¹, W. P. Zhang¹, W. J. Liu¹, S. J. Ding¹ (1.Fudan Univ.(China))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-5] Resistance Switching Memory Operation of CaF₂/Si/CaF₂ Resonant-tunneling Quantum-well Structures using Nanocrystalline-Si Secondary Barrier Layers

^○K. Suda¹, Y. Kuwata¹, M. Watanabe¹ (1.Tokyo Tech(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-6] [No-show]Switching Kinetics of VCM-based Memristor: Evolution and Positioning of Nanofilament

^○J. Y. Chen¹, C. W. Huang¹, C. H. Chiu¹, Y. T. Huang¹, W. W. Wu¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials

[PS-4-7] Impact of Film Morphology on the Switching Characteristics of Ta₂O₅-Based Atomic Switches

^○C. Mannequin¹, T. Tsuruoka¹, T. Hasegawa², M. Aono¹ (1.NIMS, 2.Waseda Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-8] Guideline Model for the Bias-Scheme-Dependent Power Consumption of a ReRAM Crossbar Array

^○W. K. Sun¹, H. Lim¹, S. J. Choi¹, H. S. Shin¹ (1.Ewha Womans Univ.(Korea))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-4-9] Properties of SiC Resistive Memory for Harsh Environments

^○K. Morgan¹, J. Fan¹, R. Huang¹, L. Zhong¹, R. Gowers¹, L. Jiang¹, K. De Groot¹ (1.Univ. of Southampton(UK))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

894件中(391 - 400)

« 前へ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
次へ »

▲