[M-3-2] Development of Novel 1200V-Class 4H-SiC Implantation and Epitaxial Trench MOSFETs with Low On-resistance
2015 International Conference on Solid State Devices and Materials
|2015年9月29日(火)
894件中(251 - 260)
[M-3-2] Development of Novel 1200V-Class 4H-SiC Implantation and Epitaxial Trench MOSFETs with Low On-resistance
[M-3-3] A High Current Operation in a 1.6 kV GaN-based Trenched Junction Barrier Schottky (JBS) Diode
2015 International Conference on Solid State Devices and Materials
|2015年9月29日(火)
[M-3-4] Investigation of Breakdown Characteristics in High-voltage GaN-HEMTs
2015 International Conference on Solid State Devices and Materials
|2015年9月29日(火)
[M-3-5] A Robust 600V GaN HEMT Technology on GaN-on-Si with 400V, 5μsec Load-Short-Circuit Withstand Capability
2015 International Conference on Solid State Devices and Materials
|2015年9月29日(火)
[M-4-1] (Invited) Vertical Power Electronic Devices based on Bulk Gallium Nitride Substrates
2015 International Conference on Solid State Devices and Materials
|2015年9月29日(火)
[M-4-2] Embedded Source Field-Plate for Reduced Parasitic Capacitance of AlN/GaN MIS-HEMTs on Si Substrate
2015 International Conference on Solid State Devices and Materials
|2015年9月29日(火)
[M-4-3] Analysis of GaN-HEMT Switching Characteristics for High-Power Applications
2015 International Conference on Solid State Devices and Materials
|2015年9月29日(火)
[M-4-4] Effect of Drain Conductance in Equivalent Circuit Model for GaN GIT Bidirectional Switch
2015 International Conference on Solid State Devices and Materials
|2015年9月29日(火)
[M-5-1] (Invited) Diamond Electronics for Power Devices and Sensing Applications
2015 International Conference on Solid State Devices and Materials
|2015年9月29日(火)
[M-5-2] High Voltage Diamond MESFET with VBR > 1.5kV
2015 International Conference on Solid State Devices and Materials
|2015年9月29日(火)