[M-1-3] (Invited) 25nm InP HEMT TMIC Process with 1 THz Amplifier Circuit Gain
2015 International Conference on Solid State Devices and Materials
|2015年9月28日(月)
894件中(241 - 250)
[M-1-4] Wide Frequency Tuning in Resonant-Tunneling-Diode Terahertz Oscillator Using Forward-Biased Varactor Diode
2015 International Conference on Solid State Devices and Materials
|2015年9月28日(月)
[M-1-5] A Resonant Tunneling Super Regenerative Detector with Input/Output Isolation and Improved Sensitivity
2015 International Conference on Solid State Devices and Materials
|2015年9月28日(月)
[M-2-1] (Invited) GaN Metal-Oxide-Semiconductor HEMTs: Selected Physical Aspects and Characterization
2015 International Conference on Solid State Devices and Materials
|2015年9月28日(月)
[M-2-2L] Highly Reduced Current Collapse in AlGaN/GaN HEMTs by Combined Application of Oxygen Plasma Treatment and Field-plate Structures
2015 International Conference on Solid State Devices and Materials
|2015年9月28日(月)
[M-2-3] AlGaN/GaN MOS-HFETs Exhibiting Improved Hysteresis in Transfer Characteristics with Recessed Gate Structures Formed by Selective Regrowth
2015 International Conference on Solid State Devices and Materials
|2015年9月28日(月)
[M-2-4] MOS Characteristics on Homoepitaxial GaN Layer
2015 International Conference on Solid State Devices and Materials
|2015年9月28日(月)
[M-2-5] Low-Frequency Noise in AlTiO/AlGaN/GaN Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors
2015 International Conference on Solid State Devices and Materials
|2015年9月28日(月)
[M-2-6] Fabrication and Characterization of AlTiO/InAlN/AlN/GaN Metal-Insulator-Semiconductor Field-Effect Transistor
2015 International Conference on Solid State Devices and Materials
|2015年9月28日(月)
[M-3-1] (Invited) SiC Power Electronics - Current and Future Prospects of SiC Devices
2015 International Conference on Solid State Devices and Materials
|2015年9月29日(火)