2015 International Conference on Solid State Devices and Materials

^○J. L. Huang^1,2, W. Q. Ma¹, Y. H. Zhang¹, Y. L. Cao¹, K. Liu¹, J. W. Huang¹, S. L. Lu² (1.Inst. of Semiconductors, Chinese Academy of Sci., 2.Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Academy of Sci.(China))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-7-5] Enhanced Responsivity and Detectivity Values of Short 30-period InAs/GaSb Type-II Infrared Photodetectors with Reduced Device Areas

^○H. A. Chen^1,2, T. C. Shih¹, H. Y. Chen³, S. Y. Lin^1,2,3 (1.Academia Sinica, 2.National Taiwan Univ., 3.National Taiwan Ocean Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-7-6] Low-resistivity Lateral PIN Junction Formed by Ni-InGaAsP Alloy for Carrier-Injection InGaAsP Photonic Devices

^○J. K. Park^1,2, M. Takenaka^1,2, S. Takagi^1,2 (1.Univ. of Tokyo, 2.JST-CREST(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-7-7] Broadband Gain Superluminescent Diode Based on Self-assembled InAs Quantum Dots with Segmented Contacts

^○N. Ozaki^1,2, T. Yasuda¹, H. Shibata¹, H. Ohsato³, E. Watanabe³, N. Ikeda³, Y. Sugimoto³, D. T. D. Childs², R. A. Hogg² (1.Wakayama Univ., 2.Univ. of Sheffield, 3.National Inst. Materials Sci.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

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