2015 International Conference on Solid State Devices and Materials

2015年9月27日〜 2015年9月30日
Sapporo Convention Center, Sapporo, Japan

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894件中(781 - 790)

[PS-9-3] Characterization of Epitaxial Calcium Fluoride as a Dielectric Material for Ultra-thin Barrier Layers in Silicon Microelectronics

^○Y. Y. Illarionov^1,2, M. I. Vexler², V. V. Fedorov², S. M. Suturin², N. S. Sokolov², T. Grasser¹ (1.TU Wien, 2.Ioffe Physical-Technical Inst.(Austria))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-4] All Oxide All Solution-processed Active Matrix Thin-film Transistor for Electrophoretic Display Application

^○T. T. Phan^1,2, S. Inoue¹, H. Koyama³, Y. Takamura^1,2, T. Shimoda¹ (1.JAIST, 2.JST-CREST, 3.Toppan Printing Co., Ltd.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-5] Mesoscopic Blockade and Staircase Phenomena of Holes in DNA/Si-MOSFET by Gate Voltage Modulation

^○N. Matsuo¹, S. Nakamura¹, T. Takada¹, A. Heya¹, K. Yamana¹, T. Sato², S. Yokoyama², Y. Omura³ (1.Univ. of Hyogo, 2.Hiroshima Univ., 3.Kansai Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-6] A Quasi-ballistic Transport Model for Top- and Back-gated Graphene Nanoribbon Field-effect Transistors

^○G. Hu¹, S. Hu¹, L. Wang¹, R. Liu¹, L. Zheng¹ (1.Fudan Univ.(China))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-7] A Concept of Heterogeneous Circuits with Epitaxial Tunnel Layer Tunnel FETs

^○J. H. Hung¹, P. Y. Wang¹, B. Y. Tsui¹, C. H. Yang¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-8] Gate-Stacking Engineering for Insta Ge/SiO₂/SiGe MOS Devices

^○P. H. Liao¹, W. T. Lai², S. C. Luo¹, K. C. Yang¹, T. George¹, P. W. Li² (1.National Central Univ., 2.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-9] Novel Design of Electrostatic Lens Potential for Improving Bending Curvature and Transmission Probability of Drive Current for Vertical Body Channel MOSFET

^○M. Muraguchi^1,2,3, T. Endoh^1,2,3 (1.Graduate School of Engineering, Tohoku Univ., 2.CIES, Tohoku Univ., 3.JST-ACCEL(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-11] Geometry-dependent Phase/Stress and Electrical Resistivity in Nickel-Silicide Nanowires

^○C. C. Wang¹, Y. Y. Hsiao¹, I. H. Chen¹, W. T. Lai¹, T. George¹, P. W. Li² (1.National Central Univ., 2.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-9-12] Changes in Morphology and Local Conductance of GeTe-Sb₂Te₃ Superlattice Films on Silicon Made by Scanning Probe Microscopy in a Lithography Mode

^○L. Bolotov^1,2, T. Tada^1,2, Y. Saito^1,2, J. Tominaga^1,2 (1.AIST, 2.JST-CREST(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-10-1] Temperature Dependence Analysis of Printed Organic MOSFET

^○H. Zenitani¹, T. K. Maiti², T. Hayashi¹, Y. Tanimoto¹, K. Sato¹, L. Chen², H. Kikuchihara², M. Miura Mattausch², H. J. Mattausch¹ (1.Graduate School of Advanced Sciences of Matter, Hiroshima Univ., 2.HiSIM Research Center, Hiroshima Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

894件中(781 - 790)