2015 International Conference on Solid State Devices and Materials

2015年9月27日〜 2015年9月30日
Sapporo Convention Center, Sapporo, Japan

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894件中(631 - 640)

[PS-1-9] Influence of in-situ Sb-Doping on Crystalline and Electrical Characteristics of n-type Ge_1-xSn_x Epitaxial Layer

^○J. Jeon¹, T. Asano^1,2, W. Takeuchi¹, M. Kurosawa^1,3, O. Nakatsuka¹, S. Zaima^1,3 (1.Nagoya Univ., 2.Res. Fellow of the Japan Society for the Promotion of Sci., 3.EcoTopia Sci. Inst., Nagoya Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-10] n⁺Si/pGe Cross Heterojunctions Fabricated by Narrow Membrane Bonding

^○T. C. Liu^1,2, S. Kabuyanagi^1,2, T. Nishimura^1,2, A. Toriumi^1,2 (1.Univ. of Tokyo, 2.JST-CREST(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-11] PtGe-Source/Drain Ge p-MOSFET with High On/Off Ratio and Low Parasitic Resistance

^○S. Tanaka¹, Y. Nagatomi¹, Y. Nagaoka¹, K. Yamamoto¹, D. Wang¹, H. Nakashima¹ (1.Kyushu Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-12] Impact of Ultra-high Sn Content Sn_xGe_1-x Interlayer on Reducing Schottky Barrier Height at Metal/n-Ge Interface

^○A. Suzuki¹, O. Nakatsuka¹, S. Shibayama^1,2, M. Sakashita¹, W. Takeuchi¹, M. Kurosawa^1,3, S. Zaima^1,3 (1.Graduate School of Eng., Nagoya Univ., 2.Res. Fellow of The Japan Society for the Promotion of Sci., 3.EcoTopia Sci. Inst., Nagoya Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-13] Introduction of SiGe/Si Heterojunction into Novel Multilayer Tunnel FinFETs

^○Y. Morita¹, T. Mori¹, K. Fukuda¹, W. Mizubayashi¹, S. Migita¹, K. Endo¹, S. O'uchi¹, Y. X. Liu¹, M. Masahara¹, T. Matsukawa¹, H. Ota¹ (1.AIST(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-14] Observation of Plastic and Elastic Deformations in Ge Films of Bonded GeOI

^○T. Nishimura¹, T. Nakamura¹, T. Yajima¹, A. Toriumi¹ (1.Univ. of Tokyo(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-15] Formation of Single Crystalline Silicon with Midair Cavity for Meniscus Force-Mediated Local Layer Transfer and Fabrication of High-Performance MOSFETs on Insulator

^○M. Akazawa¹, S. Takeshima¹, A. Nakagawa¹, K. Hiramatsu¹, S. Higashi¹ (1.Hiroshima Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-16] Comprehensive Characterization of Generated Trap Sites in Gate Insulator using Advanced Stress-induced Leakage Current Simulator

^○Y. Higashi¹, J. Chen¹, T. Ishihara¹ (1.Toshiba Corp.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-17] First-Principles Study on Hydrogen Annealing Effect in Si/SiO₂ Interface by Thermal Oxidation

^○S. Kawachi¹, H. Hiroki¹, M. Araidai¹, H. Kageshima^2,4, T. Endoh^3,4, K. Shiraishi^1,4 (1.Nagoya Univ., 2.Shimane Univ., 3.Tohoku Univ., 4.JST-ACCEL(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-1-18] Angle-resolved Photoelectron Spectroscopy Studies of Initial Stage of Thermal Oxidation on 4H-SiC (0001)

^○H. Arai¹, H. Nohira¹ (1.Tokyo City Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

894件中(631 - 640)