2015 International Conference on Solid State Devices and Materials

R. L. Wang¹, ^○J. L. Shi¹, Y. F. Hao¹, K. B. Lee¹, X. J. Yang¹, W. D. Wu¹, H. H. Liao², H. H. Tsai², Y. Z. Juang² (1.National Kaohsiung Normal Univ., 2.National Applied Research Labs.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-1] Accuracy of Recessed Gate for GaN Power FETs and High Temperature Capability of Diamond Heat Sink

^○Y. T. Kim¹, J. H. Lee², Y. M. Jhon¹ (1.Korea Inst. of Sci. & Tech., 2.Kyungpook National Univ.(Korea))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-2] Enhancement Mode AlGaN/GaN MIS-HEMTs Using Multilayer HfO₂/La₂O₃ Gate Insulator for High Power Application

Y. X. Huang¹, W. C. Shih¹, T. W. Lin¹, ^○C. H. Wu¹, Y. C. Lin¹, J. S. Maa¹, E. Y. Chang¹, K. Kakushima², H. Iwai² (1.National Chiao Tung Univ., 2.Tokyo Tech(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-3] Improved Linearity and Reliability in GaN MOS-HEMTs Using Nanolaminate La₂O₃/SiO₂ Gate Dielectric

W. C. Shih¹, H. H. Hsu¹, Y. X. Huang¹, T. W. Lin¹, ^○C. H. Wu¹, Y. C. Lin¹, J. S. Maa¹, E. Y. Chang¹, K. Kakushima², H. Iwai² (1.National Chiao Tung Univ., 2.Tokyo Tech(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

[PS-6-4] Thermal Stability of the Interface between Atomic Layer Deposited High-k ZrO₂ and GaN

^○H. Wang^1,2, G. Ye¹, K. S. Ang² (1.Nanyang Technological Univ., 2.Temasek Laboratories@NTU(Singapore))

2015 International Conference on Solid State Devices and Materials |PDF ダウンロード

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