2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (641 - 650)

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[PS-12-19(Late News)] Fabrication of Tunnel Junctions with Fe₃O₄ Electrode and MgO Barrier

^○Y. Yamamoto¹, S. Sasaki¹, T. Yanase¹, T. Shimada¹, T. Nagahama¹ (1.Hokkaido Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-12-20(Late News)] Minority Spin Transport in Epitaxially Grown Nickel-Iron Nitride Films

^○F. Takata¹, K. Ito^1,2,3, K. Kabara², S. Higashikozono¹, T. Gushi¹, K. Toko¹, M. Tsunoda², T. Suemasu¹ (1.Univ. of Tsukuba(Japan), 2.Tohoku Univ.(Japan), 3.JSPS(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-13-01] Thickness-Dependent Flatband Voltage Shift in MOSCAP with MoS₂ and High-k Gate Dielectric

^○R. Yang¹, J. Cai², S. Wang², D. Chi², K. W. Ang¹ (1.National Univ. of Singapore(Singapore), 2.Institute of Materials Research and Engineering(Singapore))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:00 AM - 11:03 AM |PDF Download

[PS-13-02] First Principles Calculation of Charged Vacancies in Single-Layer Molybdenum Disulfide

^○S. Urasaki¹, H. Kageshima¹ (1.Shimane Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:03 AM - 11:06 AM |PDF Download

[PS-13-03] High Performance Ultrathin Micro-Supercapacitors

^○F. Tanaka¹, A. Sekiguchi², K. U. Laszczyk¹, K. Kobashi², T. Yamada², K. Hata² (1.TASC(Japan), 2.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:06 AM - 11:09 AM |PDF Download

[PS-13-04] High-Mobility and Low-Carrier-Density Sputtered-MoS₂ Film by Low-Temperature Forming-Gas Annealing for 3D-IC

^○J. Shimizu¹, T. Ohashi¹, K. Matsuura¹, I. Muneta¹, K. Kakushima¹, K. Tsutsui¹, H. Wakabayashi¹ (1.Tokyo Tech(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:09 AM - 11:12 AM |PDF Download

[PS-13-05] Combination of Synthesis and Post-synthesis Approaches for the Preparation of Single-Walled Carbon Nanotubes with a High Percentage of Semiconductor-type

^○S. Sakurai¹, S. Li^1,3, M. Yamada¹, H. Sakurai^1,2, A. Sekiguchi¹, F. Tanaka^1,2, D. Futaba¹, K. Hata¹ (1.AIST(Japan), 2.TASC(Japan), 3.National Univ. of Singapore(Singapore))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:12 AM - 11:15 AM |PDF Download

[PS-13-06] Centimeter-scale High-performance Few-layer MoS₂ Fabricated by RF Magnetron Sputtering and Subsequent Post-deposition Annealing

^○S. Ishihara^1,3, Y. Hibino¹, N. Sawamoto¹, T. Ohashi², K. Matsuura², H. Wakabayashi², A. Ogura¹ (1.Meiji Univ.(Japan), 2.Tokyo Tech(Japan), 3.Research Fellow of JSPS(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:15 AM - 11:18 AM |PDF Download

[PS-13-07] Thin Film Transistors with Length-sorted Single-wall Carbon Nanotubes

^○Y. Kuwahara¹, F. Nihey², T. Saito¹ (1.AIST(Japan), 2.NEC Corp.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:18 AM - 11:21 AM |PDF Download

[PS-13-08] Growth of Graphene/3C-SiC (111)/4H-SiC (0001) by a Sublimation Technique with a Vertical Infrared-Lamp Annealer

^○Y. Sekine¹, K. Kumakura¹, H. Hibino^1,2 (1.NTT BRL(Japan), 2.Kwansei Gakuin Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:21 AM - 11:24 AM |PDF Download

734 results (641 - 650)

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