[PS-13-14] Photocatalytic Performance of Multi-Morphological Nb-doped TiO₂ Nanofibers

^○T. H. Lin¹, K. C. Hsiao¹, J. S. Chih¹, P. Y. Wu¹, T. F. Lin¹, M. C. Wu^1,2 (1.Chang Gung Univ.(Taiwan), 2.Chang Gung Memorial Hospital(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-13-15(Late News)] First-Principles Device Simulations of All Two-Dimensional Material Tunneling Field-Effect Transistors

^○M. Ohfuchi¹, T. Ozaki² (1.Fujitsu Labs. Ltd.(Japan), 2.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-14-01] Drain-Extended FinFET Technology for RF Power Applications

^○B. Y. Chen^1,2, K. M. Chen¹, C. S. Chiu¹, G. W. Huang^1,2, H. C. Chen¹, C. C. Chen¹, F. K. Hsueh¹, M. C. Chen¹, E. Y. Chang² (1.National Nano Device Labs.(Taiwan), 2.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:00 AM - 11:03 AM |PDF Download

[PS-14-02] Design and Characterization of Logic Compatible Drain Extended FinFETs for Embedded High-Voltage Circuits

H. H. Chen¹,^○S. H. Shih¹, Y. C. King¹, C. J. Lin¹ (1.National Tsing Hua Univ.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:03 AM - 11:06 AM |PDF Download

[PS-14-03] Impact of the 3D Stacking Power Supply on Chip for High Frequency DC-DC Converter

^○K. Hiura¹, Y. Ikeda¹, Y. Hino¹, S. Matsumoto¹ (1.Kyushu Inst. of Tech.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:06 AM - 11:09 AM |PDF Download

[PS-14-04] Comparisons of Hot-carrier Effects of Scaled N-Channel and P-Channel Thin-Film SOI Power MOSFETs under Constant Drain Electric Field

^○K. Ikeno¹, S. Matsumoto¹ (1.Kyushu Inst. of Tech.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:09 AM - 11:12 AM |PDF Download

[PS-14-05] AC Hot Carrier Effect of the Thin-Film SOI Power n-MOSFET

^○D. Takenaka¹, S. Matsumoto¹ (1.Kyushu Inst. of Tech.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:12 AM - 11:15 AM |PDF Download

[PS-14-06] Performance Enhancement of Bipolar Devices with Slot Pattern RESURF Approach in 40V BCD Technology

^○C. H. Huang^1,2, T. Y. Huang¹, C. F. Huang², C. H. Cheng², C. Y. Yang¹, H. P. Chu¹, K. H. Lo^1,2, T. Y. Tsai¹, H. D. Su¹, J. Gong³, F. Zhao⁴ (1.Richtek Technology Corp.(Taiwan), 2.National Tsing Hua Univ.(Taiwan), 3.Tunghai Univ.(Taiwan), 4.Washington State Univ.(USA))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:15 AM - 11:18 AM |PDF Download

[PS-14-07] Ohmic Contact on N-type and P-type Ion-implanted 4H-SiC with Low-temperature Silicide-less Process

^○H. Shimizu¹, A. Shima¹, Y. Shimamoto¹ (1.Hitachi, Ltd.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:18 AM - 11:21 AM |PDF Download

[PS-14-08] A Surface-Potential-Based Reverse-Transfer Capacitance Model for Vertical SiC DMOSFET

^○M. Shintani¹, Y. Nakamura¹, M. Hiromoto¹, T. Hikihara¹, T. Sato¹ (1.Kyoto Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:21 AM - 11:24 AM |PDF Download