2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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[PS-6-11] High-Performance Thin-Film Transistors with ZnO/Al₂O₃ Superlattice Channel by Atomic Layer Deposition

^○G. D. Cui¹, D. D. Han¹, J. C. Dong¹, Y. Y. Cong¹, X. M. Zhang¹, H. J. Li¹, W. Yu¹, S. D. Zhang¹, X. Zhang¹, Y. Wang¹ (1.Peking Univ.(China))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:30 AM - 11:33 AM |PDF Download

[PS-6-12] Room-temperature Fabrication of Amorphous IGZO TFTs with Co-sputtered Zr_xSi_1-xO₂ Gate Dielectrics

P. Y. Liu¹, S. J. Wang¹, C. H. Hung¹, C. H. Wu², N. S. Wu¹,^○H. P. Yan¹, T. H. Lin¹ (1.National Cheng Kung Univ.(Taiwan), 2.Chung Hua Univ.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:33 AM - 11:36 AM |PDF Download

[PS-6-13] Study of Fabrication and Current-voltage Characteristics of MoS₂/WSe₂ Heterojunction Diode

^○Y. H. Jiang¹ (1.National Taiwan Univ. of Sci. and Tech.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:36 AM - 11:39 AM |PDF Download

[PS-6-14(Late News)] Hydrazine (N₂H₄)-based Surface Treatment Method for AlGaN/GaN MIS-HEMTs with a High Quality Interface

^○H. Jung¹, M. Shin¹, H. Ahn¹, J. Do¹, S. Chang¹, K. Cho¹, B. Min¹, H. Kim¹, H. Yoon¹, J. Lim¹ (1.Electronics and Telecommunications Res. Inst.(Korea))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:39 AM - 11:42 AM |PDF Download

[PS-6-01] InAs Quantum-Well MOSFET Performance Improvement by Using PEALD AlN Passivation Layer and In-Situ NH₃ Post Remote-Plasma Treatment

P. C. Chang¹, Q. H. Luc¹, G. Y. Lin¹,^○C. C. Chang¹, J. W. Lin¹, C. C. Fan Chang¹, K. S. Yang¹, Y. C. Lin¹, S. M. Sze¹, E. Y. Chang¹ (1.NCTU(Taiwan))