The Japan Society of Applied Physics

2016 International Conference on Solid State Devices and Materials

2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

734 results (11 - 20)

[A-2-01(Invited)] Experimental Demonstration of Negative Capacitance epi-Ge/Si FETs with Ferroelectric Hf-based Oxide Gate Stack for Swing Sub-60mV/dec and Hysteresis-Free

○M. H. Lee1, P. G. Chen1,2, C. Liu3, K. T. Chen4, M. J. Xie1, S. N. Liu1, H. H. Chen1, C. H. Tang1, J. W. Lee1, W. H. Tu2, K. S. Li5, M. C. Chen5, M. H. Liao2, C. Y. Chang3,6, C. H. Cheng1, S. T. Chang4, C. W. Liu2 (1.National Taiwan Normal Univ.(Taiwan), 2.National Taiwan Univ.(Taiwan), 3.NCTU(Taiwan), 4.National Chung Hsing Univ.(Taiwan), 5.National Nano Device Lab.(Taiwan), 6.Academia Sinica(Taiwan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 3:40 PM - 4:10 PM |PDF Download

[A-3-03] On the Drain Bias Dependence of Tunnel FETs

○K. Fukuda1, T. Mori1, H. Asai1, J. Hattori1, W. Mizubayashi1, Y. Morita1, H. Fuketa1, S. Migita1, H. Ota1, M. Masahara1, K. Endo1, T. Matsukawa1 (1.AIST(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 10:20 AM - 10:40 AM |PDF Download

734 results (11 - 20)