2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (91 - 100)

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[C-6-04(Late News)] Current-induced Magnetization Switching in a MnGa/Pt Film

^○R. Ranjbar¹, K. Suzuki¹, Y. Sasaki¹, L. Bainsla¹, S. Mizukami¹ (1.Tohoku Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 12:15 PM - 12:30 PM |PDF Download

[C-6-05(Late News)] High Magnetoresistance in Fully Epitaxial Magnetic Tunnel Junctions with a Semiconductor GaO_x Barrier

^○S. K. Narayananellore¹, N. Matsuo^1,2, N. Doko^1,2, H. Saito¹, S. Yuasa¹ (1.AIST(Japan), 2.Chiba Inst. of Tech.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 12:30 PM - 12:45 PM |PDF Download

[D-1-01(Invited)] Quantum Transport in van der Waals Junctions of Graphene and 2D Materials

^○T. Machida¹, S. Morikawa¹, S. Masubuchi¹, Q. Wilmart², B. Plaçais², R. Moriya¹, N. Yabuki¹, K. Watanabe³, T. Taniguchi³ (1.Univ. of Tokyo(Japan), 2.Univ. P. et M. Curie(France), 3.NIMS(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 1:30 PM - 2:00 PM |PDF Download

[D-1-02] Formation and Utilization of Composition Engineered Transition Regions Across 2D Metal-semiconductor Atomic Layer Junctions

^○B. Cho¹, Y. Kim¹, M. G. Hahm², P. M. Ajayan³ (1.Korea Institute of Materials Science(Korea), 2.Inha Univ.(Korea), 3.Rice Univ.(USA))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:00 PM - 2:15 PM |PDF Download

[D-1-03] Measurement of Anisotropic Dielectric Strength of Hexagonal Boron Nitride

^○Y. Hattori¹, T. Taniguchi², K. Watanabe², K. Nagashio^1,3 (1.Univ. of Tokyo(Japan), 2.NIMS(Japan), 3.JST-PRESTO(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:15 PM - 2:30 PM |PDF Download

[D-1-04(Invited)] Valley Hall Effect in Bilayer Graphene with Electrically Broken Inversion Symmetry

^○Y. Shimazaki¹, M. Yamamoto^1,2, I. V. Borzenets¹, K. Watanabe³, T. Taniguchi³, S. Tarucha^1,4 (1.Univ. of Tokyo(Japan), 2.JST-PRESTO(Japan), 3.NIMS(Japan), 4.RIKEN(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:30 PM - 3:00 PM |PDF Download

[D-1-05(Late News)] Insulator-to-Metal Transition in Polycrystalline MoS₂ Films Induced by Electric Double Layer Gating

^○Y. Edagawa¹, J. Pu¹, T. Osakabe¹, L. J. Li², H. Ito³, T. Takenobu^1,3 (1.Waseda Univ.(Japan), 2.KAUST(Saudi Arabia), 3.Nagoya Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 3:00 PM - 3:15 PM |PDF Download

[D-2-01(Invited)] Withdrawn

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 3:40 PM - 4:10 PM

[D-2-02] Suspended Ge Gate-All-Around Nanowire FETs with Selective Etching Technique

^○C. -C. Wan^1,2, C. -J. Su², S. -H. Hsu², G. -L. Luo², T. -H. Hou¹, W. -F. Wu², W. -K. Yeh² (1.NCTU(Taiwan), 2.National Nano Device Labs.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 4:10 PM - 4:25 PM |PDF Download

[D-2-03] Crystallization and Activationof P⁺ dope a-Ge film by Atmospheric Pressure Micro-Thermal-Plasma-Jet

^○H. Harada¹, R. Shin¹, H. Hanafusa¹, S. Higashi¹ (1.Hiroshima Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 4:25 PM - 4:40 PM |PDF Download

734 results (91 - 100)

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