2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (111 - 120)

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[D-5-04] Thickness-Controlled Low-Temperature (~380℃) Solid-Phase Crystallization of Sn-Doped Poly-Ge/Insulator for High Carrier Mobility (~320 cm²/Vs)

^○K. Moto¹, T. Sadoh¹, Y. Kai¹, R. Matsumura¹, M. Miyao¹ (1.Kyushu Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 10:30 AM - 10:45 AM |PDF Download

[D-6-01(Invited)] Kinetics of Forming Silicides in Nanowires and Nano-Heterostructures

^○Y. C. Chou¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 11:15 AM - 11:45 AM |PDF Download

[D-6-02] Magnetotransport Properties of FePt Alloy-NDs Stacked Structures

^○K. Makihara¹, T. Kawase¹, A. Ohta¹, M. Ikeda¹, S. Miyazaki¹ (1.Nagoya Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 11:45 AM - 12:00 PM |PDF Download

[D-6-03] Use of Gold Nanoparticles to Tune the Heating Capacity (ILP) of Iron Oxide Nanoparticles

^○G. Bell^1,2, L. K. Bogart¹, P. Southern¹, M. Olivo², Q. A. Pankhurst¹, I. P. Parkin¹ (1.Univ. College London(UK), 2.A*STAR(Singapore))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 12:00 PM - 12:15 PM |PDF Download

[D-6-04] Criterion for Ballistic-electron Printing of Thin Metal and Group IV Films

^○R. Suda¹, M. Yagi¹, A. Kojima¹, N. Mori², J. Shirakashi¹, N. Koshida¹ (1.Tokyo Univ. of Agri. & Tech.(Japan), 2.Osaka Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 12:15 PM - 12:30 PM |PDF Download

[E-1-01(Invited)] Current and Future Technologies of SiC Power Devices

^○H. Asahara¹, T. Nakamura¹, M. Aketa¹, Y. Nakano¹, S. Mori¹ (1.ROHM Co., Ltd.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 1:30 PM - 2:00 PM |PDF Download

[E-1-02] Study on the Guideline to Control Dry and Wet Oxidation Conditions to Improve 4H-SiC (000-1) C-face MOS Interface Characteristics

^○H. Kajifusa¹, K. Kita¹ (1.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:00 PM - 2:15 PM |PDF Download

[E-1-03] Impacts on 4H-SiC MOSFET Mobility of High Temperatue Annealing in Oxidizing Or Inert Ambient before Gate Oxide Growth

^○H. Hirai¹, K. Kita¹ (1.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:15 PM - 2:30 PM |PDF Download

[E-1-04] Reliability Study on Positive Bias Temperature Instability in SiC MOSFETs by Fast I_D Measurement

^○T. Okunishi¹, K. Hisada², H. Toyoda³, Y. Yamamoto², K. Arai², Y. Yamashita², K. Yamazaki¹, S. Nara¹ (1.Renesas Electronics Corp.(Japan), 2.Renesas Semiconductor Manufac. Co., Ltd.(Japan), 3.Renesas System Design Co., Ltd.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:30 PM - 2:45 PM |PDF Download

[E-1-05] Positive Bias Temperature Instability of SiC-MOSFETs Induced by Switching Operation (AC-PBTI)

^○E. Murakami¹, T. Furuichi¹, T. Takeshita¹, K. Oda¹ (1.Kyushu Sangyo Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:45 PM - 3:00 PM |PDF Download

734 results (111 - 120)

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