2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (691 - 700)

[PS-14-19(Late News)] Characterization of Breakdown Behavior of Diamond SBDs using Impact Ionization Coefficients

^○K. Driche^1,2,3,4, H. Umezawa^1,2,4, G. Chicot^1,5, N. Rouger^1,5, E. Gheeraert^1,2,3 (1.Univ. Grenoble Alpes(France), 2.CNRS, Inst. Neel(France), 3.Univ. of Tsukuba(Japan), 4.AIST(Japan), 5.CNRS, G2Elab(France))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 11:54 AM - 11:57 AM |PDF Download

[PS-14-01] Drain-Extended FinFET Technology for RF Power Applications

^○B. Y. Chen^1,2, K. M. Chen¹, C. S. Chiu¹, G. W. Huang^1,2, H. C. Chen¹, C. C. Chen¹, F. K. Hsueh¹, M. C. Chen¹, E. Y. Chang² (1.National Nano Device Labs.(Taiwan), 2.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-14-02] Design and Characterization of Logic Compatible Drain Extended FinFETs for Embedded High-Voltage Circuits

H. H. Chen¹,^○S. H. Shih¹, Y. C. King¹, C. J. Lin¹ (1.National Tsing Hua Univ.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-14-03] Impact of the 3D Stacking Power Supply on Chip for High Frequency DC-DC Converter

^○K. Hiura¹, Y. Ikeda¹, Y. Hino¹, S. Matsumoto¹ (1.Kyushu Inst. of Tech.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-14-04] Comparisons of Hot-carrier Effects of Scaled N-Channel and P-Channel Thin-Film SOI Power MOSFETs under Constant Drain Electric Field

^○K. Ikeno¹, S. Matsumoto¹ (1.Kyushu Inst. of Tech.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-14-05] AC Hot Carrier Effect of the Thin-Film SOI Power n-MOSFET

^○D. Takenaka¹, S. Matsumoto¹ (1.Kyushu Inst. of Tech.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-14-06] Performance Enhancement of Bipolar Devices with Slot Pattern RESURF Approach in 40V BCD Technology

^○C. H. Huang^1,2, T. Y. Huang¹, C. F. Huang², C. H. Cheng², C. Y. Yang¹, H. P. Chu¹, K. H. Lo^1,2, T. Y. Tsai¹, H. D. Su¹, J. Gong³, F. Zhao⁴ (1.Richtek Technology Corp.(Taiwan), 2.National Tsing Hua Univ.(Taiwan), 3.Tunghai Univ.(Taiwan), 4.Washington State Univ.(USA))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-14-07] Ohmic Contact on N-type and P-type Ion-implanted 4H-SiC with Low-temperature Silicide-less Process

^○H. Shimizu¹, A. Shima¹, Y. Shimamoto¹ (1.Hitachi, Ltd.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-14-08] A Surface-Potential-Based Reverse-Transfer Capacitance Model for Vertical SiC DMOSFET

^○M. Shintani¹, Y. Nakamura¹, M. Hiromoto¹, T. Hikihara¹, T. Sato¹ (1.Kyoto Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

[PS-14-09] Oxidation Mechanism of 4H-SiC in Dilute N₂O Ambient

T. H. Wu¹,^○B. Y. Tsui¹, Y. H. Tseng¹, C. T. Yeng², C. C. Hung², C. Y. Lee² (1.NCTU(Taiwan), 2.Hestia-Power Inc.(Taiwan))

2016 International Conference on Solid State Devices and Materials |Wed. Sep 28, 2016 3:00 PM - 5:00 PM |PDF Download

734 results (691 - 700)