2016 International Conference on Solid State Devices and Materials

Sep 26, 2016 - Sep 29, 2016
Tsukuba International Congress Center, Tsukuba, Japan

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734 results (301 - 310)

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[N-6-01(Invited)] The Ideal Chip is not Enough - Issues Retarding the Success of Wide Band-Gap Devices

^○N. Kaminski¹ (1.Univ. of Bremen(Germany))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 11:15 AM - 11:45 AM |PDF Download

[N-6-02] Vertical MOSFET using C-H Diamond with Trench-channel

^○T. Muta¹, T. Saito¹, M. Inaba¹, D. Matsumura¹, T. Kudo¹, Y. Kitabayashi¹, A. Hiraiwa¹, H. Kawarada¹ (1.Waseda Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 11:45 AM - 12:00 PM |PDF Download

[N-6-03] High Performance Enhancement-mode Al₂O₃/AlGaN/GaN MIS-HEMT Using Standard Fluorine Ion Implantation and Partial-gate-recess

C. H. Wu¹,^○P. C. Han¹, Q. H. Luc¹, S. C. Liu¹, Y. K. Lin¹, R. B. Lee¹, C. C. Huang¹, H. C. Wang¹, T. E. Hsieh¹, Y. C. Lin¹, E. Y. Chang¹ (1.NCTU(Taiwan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 12:00 PM - 12:15 PM |PDF Download

[N-6-04(Late News)] Normally-off Operation of Planar GaN MOS-HFET without using Etching Process

^○T. Nanjo¹, T. Hayashida¹, H. Koyama¹, A. Imai¹, A. Furukawa¹, M. Yamamuk¹ (1.Mitsubishi Electric Corp.(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 12:15 PM - 12:30 PM |PDF Download

[N-6-05(Late News)] Impact of Rapid Cooling Process in Ultra-high-temperature Oxidation of 4H-SiC(0001)

^○M. Sometani^1,2, D. Nagai¹, T. Hosoi¹, T. Shimura¹, Y. Yonezawa², M. Takei³, H. Watanabe¹ (1.Osaka Univ.(Japan), 2.AIST(Japan), 3.Fuji Electric Co., Ltd(Japan))

2016 International Conference on Solid State Devices and Materials |Thu. Sep 29, 2016 12:30 PM - 12:45 PM |PDF Download

[O-1-01(Invited)] Si-passivated Ge nFET towards a reliable Ge CMOS

^○H. Arimura¹, S. Sioncke¹, D. Cott¹, J. Mitard¹, W. Vanherle¹, R. Loo¹, J. Franco¹, T. Conard¹, P. Favia¹, H. Bender¹, L. Witters¹, H. Mertens¹, L. -Å. Ragnarsson¹, G. Pourtois¹, M. Heyns¹, A. Mocuta¹, A. V. -Y. Thean¹, D. Mocuta¹, N. Collaert¹ (1.imec(Belgium))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 1:30 PM - 2:00 PM |PDF Download

[O-1-02] Impact of Ozone Post Oxidation to the Electrical Properties of HfO₂/Al₂O₃/GeO_x/Ge pMOSFETs

^○R. Zhang¹, X. Tang¹, X. Yu¹, J. Li¹, Y. Zhao¹ (1.Zhejiang Univ.(China))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:00 PM - 2:20 PM |PDF Download

[O-1-03] Design of Al₂O₃/SiO₂ Laminated Stacks with Mutiple Interface Dipole Layers to Induce Large Flatband Voltage Shifts of MOS Capacitors

^○H. Kamata¹, K. Kita¹ (1.Univ. of Tokyo(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:20 PM - 2:40 PM |PDF Download

[O-1-04] Effect of Metal-oxide Addition on GeO₂ and Ge/GeO₂ Interfaces: DFT Calculations

H. Li¹,^○J. Robertson¹ (1.Cambridge Univ.(UK))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 2:40 PM - 3:00 PM |PDF Download

[O-1-05] Study on Dipole Layer Formation and its Origin at Al₂O₃/AlF_xO_y and Al₂O₃/AlN_xO_y Multi-anion Dielectric Interfaces by considering Anion Areal Density and Valence Differences

^○J. Fei¹, R. Kunugi², T. Watanabe², K. Kita¹ (1.Univ. of Tokyo(Japan), 2.Waseda Univ.(Japan))

2016 International Conference on Solid State Devices and Materials |Tue. Sep 27, 2016 3:00 PM - 3:20 PM |PDF Download

734 results (301 - 310)

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