[D-9-1] Hot Electron Transistors Using InGaAs/InAlGaAs Heterostructure

K. Imamura、S. Muto、T. Fujii、H. Ohnishi、N. Yokoyama、S. Hiyamizu、A. Shibatomi (1.Fujitsu Limited.)

1986 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-2] Extremely High Peak-to-Valley Current Ratio Obtained in an InAlAs/InGaAs Resonant Tunneling Barrier Structure Grown by MBE

Tsuguo Inata、Shunichi Muto、Toshio Fujii、Satoshi Hiyamizu (1.Fujitsu Laboratories Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-3] Heterojunction Bipolar Transistors Fabricated by Emitter and Base Self-Alignment Techniques

M. Inada、K. Eda、Y. Ota、A. Nakagawa、T. Hirose、Y. Yanagihara (1.Wireless Research Lab., Matsushita Electric Ind. Co. Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-4] High Transconductance Inverted HEMT for LSI

T. Saito、S. Nishi、H. Inomata、T. Itoh、Y. Sano、K. Kaminishi (1.Research Laboratory, Oki Electric Industry Co., Ltd.)

1986 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-5] A p-Channel Double Heterojunction GaAs/AlGaAs Modulation Doped Field Effect Transistor

Kanji Yoh、J. S. Harris Jr. (1.Solid State Electronics Lab, Stanford University)

1986 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-6] AlInAs/GaInAs HIFETs(Hetero-Interface FETs) grown by Normal pressure MOCVD Using Triethylmetals

M. Kamada、H. Ishikawa、M. Ikeda、Y. Mori、C. Kojima (1.Sony Corporation Research Center)

1986 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-7] AlxGa1-xAs Hetero-MIS Gate Depletion-Mode InP FET's

T. Itoh、K. Kasahara、T. Ozawa、K. Ohata (1.Microelectronics Research Laboratories, NEC Corporation)

1986 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-11-5] Efficiency Improvement in Amorphous SiGe:H Solar Cells by the Use of a Graded Bandgap Layer at the i/n Interface

S. Yamanaka、S. Yoshida、M. Konagai、K. Takahashi (1.Department of Physical Electronics, Tokyo Institute of Technology)

1986 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-11-6] Near Infrared Photoconductivity in a-Si:H(F)/a-SiGe:H(F) Multilayers

Shunri Oda、Hajime Shirai、Akihito Tanabe、Jun-ichi Hanna、Tetsuro Nakamura、Isamu Shimizu (1.The Graduate School at Nagatsuta, Research Laboratory of Engineering Materials, Tokyo Institute of Technology)

1986 International Conference on Solid State Devices and Materials |PDF ダウンロード