[A-2-4] Blanket CVD-W Formed by SiH4 Reduction of WF6 on TiN for Planar Interconnection

M. Iwasaki、H. Itoh、T. Katayama、K. Tsukamoto、Y. Akasaka (1.LSI R&D Lab., Mitsubishi Electric Corp.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-1] Effect of Atomic-Order Substrate Surface Planarization and O2 Partial Pressure Control during Growth on Crystalline Quality of Si/SrxBa1-xO/Si(111) Structure

Yuichi Kado、Yoshinobu Arita (1.NTT LSI Laboratories)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-2] Digital CVD of SiO2

Masayuki NAKANO、Hideaki KAWAMOTO、Akiyoshi NAGATA、Masataka HIROSE、Yasuhiro HORIIKE (1.Department of Physical Electronics, Faculty of Engineering, Hiroshima University)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-3] Atomic Layer Growth of Silicon by Excimer Laser Induced Cryogenic CVD

T. TANAKA、T. FUKUDA、Y. NAGASAWA、S. MIYAZAKI、M. HIROSE (1.Department of Electrical Engineering, Hiroshima University)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-4] Mechanism of Si Laser Atomic Layer Epitaxy Using the Adsorption and Thermally-induced Reactions of Si2H6 on Si(100) 2x1

Y. Suda、D. Lubben、T. Motooka、J. E. Greene (1.R&D Center, Toshiba Corporation、2.Coordinated Science Laboratory, University of Illinois)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-3-5] Abrupt and Defect-Free p+-n+ Junction Formed by Low-Temperature Photo-Epitaxy with Continuous Boron and Phosphorous Doping

Tatsuya Yamazaki、Hiroshi minakata、Takashi Ito (1.Fujitsu Laboratries Ltd.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-1] Dry Oxidation Study on CVD-SiO2/Thermal-SiO2/Si Structure

Shigeki KURODA、Kenji NISHI、Jun UEDA (1.Oki Electric Industry Co., Ltd.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-2] Highly Stable Fluorinated Plasma CVD Silicon Nitride Film by SiH4 Addition for ULSI Passivation

K. Shimokawa、M. Yoshimaru、H. Matsui (1.VLSI R&D Center, Oki Electric Industry Co., Ltd.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-4-3] Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD

Nobumasa SUZUKI、Toshiaki YOSHIKAWA、Kazuya MASU、Kazuo TSUBOUCHI、Nobuo MIKOSHIBA (1.Production Engineering Research Laboratory, Canon Inc.、2.Research Institute of Electrical Communication, Tohoku University)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-5-1] High Voltage MOSFETs Using Submicron LSI Process

Masatoshi Morikawa、Isao Yoshida、Hirotsugu Kojima、Yoshifumi Kawamoto (1.Central Research Laboratory, Hitachi Ltd.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード