[B-3-4] A Sub-10 ps/Gate DCFL Circuit with 0.2 μm-Gate GaAs MESFET

Hiromi TSUJI, Hiroki I. FUJISHIRO, Hiroshi NAKAMURA, Seiji NISHI (1.Research and Development Group, Oki Electric Industry Co., Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-3-5] Delay Times of 1/4-μm-Gate InAlAs-InGaAs HEMT's

Takatomo ENOKI, Kunihiro ARAI, Yasunobu ISHII, Toshiaki TAMAMURA (1.NTT LSI Laboratories, 2.Opto-electronics Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-3-6] Improvement of GaAs MESFET's Characteristics on SiO2-Back-Coated Si Substrate by MOCVD

Takashi Egawa, Shinji Nozaki, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno (1.Department of Electrical and Computer Engineering, 2.Nagoya Institute of Technology)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-3-7] A New Interpretation of the Orientation Effect in GaAs MESFET's

Qing-An Huang, Shi-Ji Lu, AND Qin-Yi Tong (1.Microelectronics Center, Southeast University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-4-1] GaAs Tetrahedral Quantum Dots: Towards a Zero-Dimensional Electron-Hole System

T. Fukui, S. Ando, Y. Tokura, T. Toriyama (1.NTT Basic Research Laboratories, 2.NTT Applied Electronic Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-4-2] AlAs/GaAs Disordered Superlattices

Akio SASAKI, Makoto KASU, Susumu NODA (1.Department of Electrical Engineering, Kyoto University)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-4-3] Fabrication and Optical Characterization of InGaAs/InP Quantum Wires and Dots

J. N. Patillon, C. Delalande, C. Jay, J. P. Andre, R. Gamonal, M. Iost, B. Soucail, M. Voos, G. M. Martin (1.Laboratoires d'Electronique Philips, 2.Laboratoire de Physique de la Matiere Condensee de l'Ecole Normale Superieure)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-4-4] Selective Growth by Electron Beam Induced MOCVD for Quantum Microstructures

T. Takahashi, Y. Arakawa, M. Nishioka, T. Ikoma (1.Research Center for Aduanced Science and Technology, University of Tokyo, 2.Institute of Industrial Science, University of Tokyo)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-4-5] GaInAs/InP Multi-Quantum Wells and Strained Super-Lattices Grown by Chemical Beam Epitaxy

Toshi K. Uchida, Takashi Uchida, Noriyuki Yokouchi, Kazuaki Mise, Fumio Koyama, Kenichi Iga (1.Tokyo Institute of Technology)

1990 International Conference on Solid State Devices and Materials |PDF Download

[B-4-6] Replacement of Surface In Atoms by Ga during Migration-Enhanced Epitaxy

Hiroshi YAMAGUCHI, Yoshiji HORIKOSHI (1.NTT Basic Research Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF Download