[A-11-4] Two-Dimensional Analysis of Interface State Induced Performance Degradation in LDD MOSFET's

T. Wang, C. Huang, T. E. Chang (1.Department of Electronics Engineering, Institute of Electronics National Chiao-Tung University, 2.Technology Development Dept., Macronix International Co.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-12-1] Analysis of Isolation Degradation Induced by Interlayer Material in Capacitor Over Bit-Line (COB) DRAM Cell

H. Mori, K. Shibahara, K. Koyama, N. Kodama (1.ULSI Device Development Laboratories NEC Corporation)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-12-2] A 0.4μm Gate-All-Around TFT (GAT) Using a Dummy Nitride Pattern for High Density Memories

S. Maegawa, T. Ipposhi, S. Maeda, H. Nishimura, O. Tanina, H. Kuriyama, Y. Inoue, N. Tsubouchi (1.ULSI Laboratory, Mitsubishi Electric Corporation, 2.Ryoden Semiconductor System Engineering Corporation)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-12-3] A Novel Source-Side Injection Split-Gate Flash Cell Technology for High Density Low Voltage Applications

Yoshimitsu YAMAUCHI, Masanori YOSHIMI, Kiyosige OMORI, Shinji NITTA, Norio MIZUKOSHI, Katsunori SUZUKI (1.1st Development Dept., VLSI Research Laboratory, Sharp Corporation)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-12-4] 256 Mbit High Density CMOS Non Volatile Memories Field Isolation by Using High Temperature Poly Buffer LOCOS(HTPBL)

S. Deleonibus, P. Spinelli, F. Vinet, M. Heitzmann, G. Guegan, C. Leroux (1.LETI(CEA-Technologies Avancees)-Department de Microelectronique)

1994 International Conference on Solid State Devices and Materials |PDF Download

[A-12-5] Highly Reliable Antifuse with TiSix/p-SiN/TiN Structure for 3.3 V Operated High Speed FPGA Application

Yoshimitsu Tamura, Hiroshi Shinriki, Tomohiro Ohta (1.LSI Research Laboratory, Kawasaki Steel Corp.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-10-1] Electromigration Resistance Measurements of Multilayered Interconnections by Short Test Lines

Shin-ichi Fukada, Masayoshi Hirasawa, Masayuki Suzuki (1.Hitachi Research Laboratory, Hitachi, Ltd., 2.Semiconductor and Integrated Circuit Division, Hitachi, Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-10-2] Resistance Oscillations Induced by a Direct Current Electromigration

K. Fujiki, A. Sano, K. Inoue, H. Sakaue, S. Shigubara, Y. Horiike (1.Hiroshima University, Dept. of Electrical Engineering, 2.Toyo University, Dept. of Electrical Engineering)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-10-3] Studies of Corrosive Outgasses from Via Holes Using Thermal Desorption Spectroscopy

S. Tokitoh, H. Uchida, H. Uchida, Y. Okuno, K. Fushimi, G. Liu, Y. Sakaya, N. Hirashita (1.VLSI Research and Development Center, Process Technology Center OKI Electric Industry Co., Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-10-4] High Temperature Void Formation Induced by H2O in Al Interconnection with SiN/PSG Passivation

T. Ueda, S. Ueda, K. Yano, N. Nomura (1.Semiconductor Research Center, Matsushita Electric Industrial Co., Ltd.)

1994 International Conference on Solid State Devices and Materials |PDF Download