[C-5-4] Schottky Barrier Heights of InxAl1-xAs(0≦X≦0.35)Epilayers on GaAs

J.-I. Chyi, R.-J. Lin, R.-M. Lin, J.-L. Shieh, J.-W. Pan (1.Department of Electrical Engineering National Central University)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-5-5] Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel Electrochemical Process

N.-J. Wu, T. Hashizume, H. Hasegawa, Y. Amemiya (1.Department of Electrical Engineering, 2.Research Center for Interface Quantum Electronics, Hokkaido University)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-6-1] Effects of a Compositionally Graded InxGa1-xAs Base in Abrupt-Emitter InP/InGaAs HBTs

K. Kurishima, H. Nakajima, S. Yamahata, T. Kobayashi, Y. Matsuoka (1.NTT LSI Laboratories, 2.NTT Radio Communication Systems Laboratories)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-6-2] AlGaAs/GaAs HBT Fabricated Using Selective MOCVD

Jeong-Hwan Son, Chang-Tae Kim, Song-Cheol Hong, Young-Se Kwon (1.Dept. of Electrical Engineering, KAIST)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-6-3] Highly Reproducible Fabrication Process for Passivated AlGaAs/GaAs HBT's with Pt/Ti/Pt/Au Base Electrodes

Sadato Hongo, Tohru Sugiyama, Yasuhiko Kuriyama, Norio Iizuka, Masao Obara (1.Toshiba Research and Development Center)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-6-4] Electroluminescence of Electrons Ballistically Injected and Emitting Phonons in the P-Type Base of AlGaAs/GaAs Heterojunction Bipolar Transistor Structures

Yoshino K. FUKAI, Tomofumi FURUTA, Tadao ISHIBASHI (1.NTT LSI Laboratories)

1994 International Conference on Solid State Devices and Materials |PDF Download

[C-6-5] Effects of Sulfide Passivation on the Performance of GaAs MISFETs with Photo-CVD Grown P3N5 Gate Insulators

Yoon-Ha Jeong, Ki-Hawn Choi, Seong-Kue Jo, Bongkoo Kang (1.Department of Electronic and Electrical Engineering Pohang University of Science and Technology)

1994 International Conference on Solid State Devices and Materials |PDF Download

[D-1-1] Low-Resistance TiSi2 Formation by Controlling Si Surface Condition for Deep-Sub-Micron CMOS

Hitoshi Wakabayashi, Takeo Matsuki, Yukishige Saito, Tohru Mogami, Takemitsu Kunio (1.Microelectronics Research Laboratories, NEC Corporation)

1994 International Conference on Solid State Devices and Materials |PDF Download

[D-1-2] Low-Temperature (400℃) W-Silicide Formation by High-Energy Xe+-Ion Beam Irradiation

Toru Yamaguchi, Jyoji Nakata, Katsumi Murase (1.NTT LSI Laboratories)

1994 International Conference on Solid State Devices and Materials |PDF Download

[D-1-3] Novel Oxygen Free Titanium Silicidation (OFS) Processing for Low Resistance and Thermally Stable SALICIDE in Deep Submicron Dual Gate CMOS

H. Kotaki, M. Nakano, S. Hayashida, Y. Takegawa, T. Matsuoka, Y. Mori S. Kakimoto, K. Mitsuhashi, J. Takagi (1.Central Research Laboratories, Sharp Corporation)

1994 International Conference on Solid State Devices and Materials |PDF Download