[B-5-1] A Comparison of SiO2-Based Alloys as High Permittivity Gate Oxides

Angus I Kingon、Jon-Paul Maria (1.Department of Materials Science and Engineering, North Carolina State University)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-2] Study on Zr-Silicate Interfacial Layer of ZrO2-MIS Structure Fabricated by Pulsed Laser Ablation Deposition Method

Takeshi Yamaguchi、Hideki Satake、Akira Toriumi (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-3] Charge Trapping in SiOx/ZrO2 Gate Dielectric Stacks

M. Houssa、M. Naili、M. M. Heyns、A. Stesmans (1.Department of Physics, Katholieke Universiteit Leuven、2.IMEC)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-4] Chemical Bonding at Interfaces between Si (100) and High-K Dielectrics: Competing Effects of i) Process Gas-Substrate and ii) Film Deposition Reactions

Gerald Lucovsky、Hiro Niimi、Robert Johnson、Joon Goo Hong、Robert Therrien、Bruce Rayner (1.Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-5] Degradation of Ta2O5 Gate Dielectric by TiCl4-Based Chemically Vapor Deposited TiN Film in W/TiN/Ta2O5/Si System

Joo Wan Lee、Chang Hee Han、Ji-Soo Park、Jin Won Park (1.Memory R&D Division, Hyundai Electronics Industries Co., Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-6] High Quality Ultrathin TaOxNy Gate Dielectric Prepared by Nitridation of Ta2O5

Hyungsuk Jung、Kiju Im、Sanghun Jeon、Dooyoung Yang、Hyunsang Hwang (1.Dept. of Materials Sci. & Eng., Kwangju Institute of Science and Technology、2.Jusung Engineering)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-7] TaOxNy Gate Dielectric with Improved Thermal Stability

Heung-Jae Cho、Dae-Gyu Park、In-Seok Yeo、Jae-Sung Roh、Jeong-Mo Hwang (1.Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-1] Intrinsic Limitations on Ultimate Device Performance and Reliability from Transition Regions at i) Si-Dielectric Interfaces and ii) Internal Interfaces

Gerald Lucovsky (1.Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering, North Carolina State University)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-2] The Polarity Dependence of Soft-Breakdown Characterization for Ultra-Thin Gate Oxides Affected by Nitrogen and Fluorine

Chao. Sung. Lai、T. S. Chao (1.Department of Electronic Engineering, Chang Gung University、2.National Nano Device Laboratory)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-3] Temperature-Dependent Soft Breakdown in Ultrathin Gate Oxides

W. Mizubayashi、Y. Yoshida、M. Narasaki、S. Miyazaki、M. Hirose (1.Department of Electrical Engineering, Hiroshima University)

2000 International Conference on Solid State Devices and Materials |PDF ダウンロード