[P-9-12] Electron emission properties of GaAsN/GaAs quantum well containing N-related localized states: the influence of illuminance

M. C. Hsieh¹, J. F. Wang¹, K. H. Tseng¹, C. H. Chao¹, Y. C. Chi¹, R. C. C. Chen¹, C. H. Yang¹, Y. S. Wang¹, C. H. Chiang¹, J. F. Chen¹ (1.National Chiao Tung Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-13] Electrical Characteristics and TDDB Reliability of ZrO₂/Al₂O₃/ZrO₂ Stack High-k Gate Dielectric

C. L. Lin¹, S. C. Wu¹, C. C. Tang¹, M. Y. Li² (1.Feng Chia Univ., 2.ProMOS Tech. Inc. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-14] Retention characteristics of resistance switching memory using Si/CaF₂/CdF₂ quantum-well structures

M. Watanabe¹, K. Uryu¹ (1.Tokyo Tech , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-15] Two Terminal Switching Device for Spin Transfer Torque (STT) MRAM

G. H. Kil¹, H. J. Yang¹, S. H. Lee¹, Y. H. Song¹ (1.Hanyang Univ. , Korea)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-16] P-type Tunneling Transistors with Poly-Si by Sequential Lateral Solidification (SLS) Growth Technique

M. H. Lee¹, T. H. Wu¹, S. C. Weng¹ (1.National Taiwan Univ. , Taiwan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-17] In-situ TEM Observation for Formation of Au Nanowires and Nanogaps caused by Electromigration

Y. Murakami¹, M. Arita¹, K. Hamada¹, Y. Takahashi¹ (1.Hokkaido Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-18] Optical selection rules for graphene nanoribbons

K. Sasaki¹, K. Kato¹, Y. Tokura¹, T. Sogawa¹ (1.NTT Basic Res. Labs. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-19] Tunnel Spin Injection into Graphene Using Al₂O₃/PTCA Barrier Grown by Atomic Layer Deposition

T. Yamaguchi¹, S. Masubuchi¹, K. Iguchi¹, R. Moriya¹, T. Machida^1,2 (1.Univ. of Tokyo, 2.PRESTO-JST , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-9-20L] Si-Nanowire-Based Memristors Constructed Using Top-Down Methods for Flexible Electronic Systems

T. Moon¹, J. Kang¹, Y. Han¹, C. Kim², Y. Jeon¹, H. Kim¹, S. Kim¹ (1.Korea Univ. , Korea, 2.Lawrence Berkeley National Laboratory , USA)

2011 International Conference on Solid State Devices and Materials |PDF Download

[P-10-1] Formation of Organic Nanodots Using Diamine Derivative and Self-Assembled Monolayer

T. Morimoto¹, S.G. Park¹, T. Inden¹, T. Nishikawa², T. Mori¹ (1.Nagoya Univ., 2.Iwate Univ. , Japan)

2011 International Conference on Solid State Devices and Materials |PDF Download