^○Naohisa Inoue^1,5, Yasunori Goto², Hirofumi Seki³, Kaori Watanabe⁴, Yuichi Kawamura⁵ (Tokyo Univ. Agr. & Technol.¹, Toyota Motor Co.², Toray Research Center³, Systems Engineering Inc.⁴, Osaka Pref. Univ.⁵)

3:15 PM - 3:30 PM

[19p-F9-9] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (7) Detection of dark matters and UFO– Infrared defect astronomy

3:30 PM - 3:45 PM

[19p-F9-10] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers (1) - Gettering Effects on Transition Metal Impurities -

^○Kazunari Kurita¹, Takeshi Kadono¹, Ryousuke Okuyama¹, Takurou Iwanaga¹, Yoshihiro Koga¹, Hidehiko Okuda¹ (SUMCO CORPORATION¹)

3:45 PM - 4:00 PM

△ [19p-F9-11] Carbon Cluster Ion Irradiated Silicon Wafers(2) -Effects of Amount and Size of Carbon Cluster on Defects Formation-

^○Ryosuke Okuyama¹, Takeshi Kadono¹, Takuro Iwanaga¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (SUMCO Corporation¹)

4:00 PM - 4:15 PM

△ [19p-F9-12] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers (3) -Effect on Transition Metal Impurities Gettering of p/p+ Epitaxial Silicon Wafers-

^○Takuro Iwanaga¹, Takeshi Kadono¹, Ryosuke Okuyama¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (SUMCO CORPORATION¹)

Break 16:15〜16:30 （4:15 PM - 4:30 PM）

4:30 PM - 4:45 PM

[19p-F9-13] Effects of Light Element Ion Beam Implantation on Transition Metal Impurities Proximity Gettering of Silicon Wafers

^○Yoshihiro Koga¹, Kazunari Kurita¹, Hidehiko Okuda¹, Takeshi Kadono¹, Ryousuke Okuyama¹, Takurou Iwanaga¹ (SUMCO CORPORATION¹)

4:45 PM - 5:00 PM

[19p-F9-14] Influence of impurities on the annealing kinetics of defects in Silicon irradiated with low dose electron

^○Akira Kiyoi¹, Masayuki Tanaka¹, Tsuyoshi Kawakami¹, Hirozo Tsuruta¹, Junji Tanimura¹, Tadaharu Minato², Tarutani Masayoshi², Kazutoyo Takano³ (Mitsubishi Electric Co. Advanced Technology R&D Lab¹, Mitsubishi Electric Co. Power Device Works², Melco Semiconductor Engineering³)

5:00 PM - 5:15 PM

[19p-F9-15] A Considerations of 300mm Silicon Wafer for Power Devices

^○Hidekazu Yamamoto¹ (Chiba Inst. of Tech.¹)

5:15 PM - 5:30 PM

[19p-F9-16] Dislocation glide motion in various SiGe epi-films doped with Sb

^○Shinya Maki¹, Tatsuya Fushimi², Yoshifumi Yamashita², Yutaka Ohno³, Ichirou Yonenaga³, Takeshi Nishikawa², Yasuhiko Hayashi² (okayamadaikou¹, okayamadaiinshizen², touhokudaigakukinken³)

5:30 PM - 5:45 PM

△ [19p-F9-17] Effects of Tin on Defects in Germanium Single Crystal

^○Wakana Takeuchi¹, Noriyuki Taoka¹, Mitsuo Sakashita¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹)

Poster presentation

[19a-PG5-1~8] 15.8 Crystal evaluation, impurities and crystal defects

Wed. Mar 19, 2014 9:30 AM - 11:30 AM PG5 (G棟2階)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

+Add all to schedule

9:30 AM - 11:30 AM

[19a-PG5-1] Observation of damaged layer in 4H-SiC substrates by Mirror Electron Microscope

^○Masayuki Sasaki¹, Kentaro Tamura¹, Makoto Kitabatake¹, Hirohumi Matsuhata², Kazutoshi Kojima² (FUPET¹, AIST²)

9:30 AM - 11:30 AM

[19a-PG5-2] Strain mapping of Al ion-implanted silicon carbide crystals by X-ray penetration-depth-controlled grazing incidence topography

^○Yumiko Takahashi¹, Keiichi Hirano¹, Jun-ichi Yoshimura¹, Shinji Nagamachi², Masanori Komuro¹ (KEK-PF¹, Nagamachi Science Laboratory²)

9:30 AM - 11:30 AM

△ [19a-PG5-3] Basic study on energy band structure of IV element compound semiconductors for solar cell

^○Ryo Suwa¹, koji Sueoka¹, Eiji Kamiyama¹ (Okayama Pref. Univ.¹)

9:30 AM - 11:30 AM

△ [19a-PG5-4] Evaluation by TEM of misfit dislocations in silicon epitaxial wafers

^○Kota Kawamoto¹, Tetsuya Nagai², Kengo Noami², Katsuhiko Nakai², Tousirou Niki², Hidekazu Yamamoto¹ (Chiba Inst. of Tech.¹, Nippon Steel & Sumikin Tech.²)

9:30 AM - 11:30 AM

△ [19a-PG5-5] Evaluation of GaN wafer for power devices by Raman spectroscopy

^○Shogo Ando¹, Shota Suzuki¹, Hidekazu Yamamoto¹ (Chiba Inst. of Tech.¹)

9:30 AM - 11:30 AM

△ [19a-PG5-6] Evaluation of stacking fault in SiC substrate by TEM

^○Miho Shiratori¹, Tetsuya Nagai², Kengo Noami², Katsuhiko Nakai², Toshiro Futagi², Hidekazu Yamamoto¹ (Chiba Inst. of Tech.¹, Nippon Steel & Sumikin Tech.²)

9:30 AM - 11:30 AM

△ [19a-PG5-7] Effects of dislocations on electrical characteristics of SiC-SBDs

^○Makoto Tominaga¹, Yuya Ishibashi¹, Shuichi Ono², Manabu Arai², Hidekazu Yamamoto¹ (Chiba Inst. of Tech.¹, New Japan Radio Corp.²)

9:30 AM - 11:30 AM

[19a-PG5-8] Cryastal structure analysis of hydrolysis products of Thalidomide

^○Kohei Otogawa¹, Yoshiyuki Ogino¹, Kazuhiko Ishikawa¹, Makoto Tanaka², Moto Shiro³, Tetuya Ousaka¹, Toru Asahi¹ (Waseda univ¹, AIST², ASMeW³)

Sessions

15. Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects

[19p-F9-1~17] 15.8 Crystal evaluation, impurities and crystal defects

[19p-F9-1] Effect of thermal stress on critical v/G value in growing single crystal Si

[19p-F9-2] Thermal stress induced void formation near defect free silicon crystal growth condition

[19p-F9-3] Thermal stress induced void formation near defect free silicon crystal growth condition and implications for 450 mm wafer inspection

[19p-F9-4] Activation energy of self-diffusion with vacancy mechanism in Si crystals

[19p-F9-5] The mechanism of dopant diffusion in Si crystals

[19p-F9-6] Diffusivity of Oxygen Enhanced by Boron in Silicon Crystals

[19p-F9-7] Relation between CZ Silicon Lattice Spacing And It's Oxygen Concentration

[19p-F9-8] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (6) Behavior of VO and CiOi in irradiation and annealing

[19p-F9-9] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (7) Detection of dark matters and UFO– Infrared defect astronomy

[19p-F9-10] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers (1) - Gettering Effects on Transition Metal Impurities -

△ [19p-F9-11] Carbon Cluster Ion Irradiated Silicon Wafers(2) -Effects of Amount and Size of Carbon Cluster on Defects Formation-

△ [19p-F9-12] Proximity Gettering of Carbon Cluster Ion Irradiated Silicon Wafers (3) -Effect on Transition Metal Impurities Gettering of p/p+ Epitaxial Silicon Wafers-

[19p-F9-13] Effects of Light Element Ion Beam Implantation on Transition Metal Impurities Proximity Gettering of Silicon Wafers

[19p-F9-14] Influence of impurities on the annealing kinetics of defects in Silicon irradiated with low dose electron

[19p-F9-15] A Considerations of 300mm Silicon Wafer for Power Devices

[19p-F9-16] Dislocation glide motion in various SiGe epi-films doped with Sb

△ [19p-F9-17] Effects of Tin on Defects in Germanium Single Crystal

[19a-PG5-1~8] 15.8 Crystal evaluation, impurities and crystal defects

[19a-PG5-1] Observation of damaged layer in 4H-SiC substrates by Mirror Electron Microscope

[19a-PG5-2] Strain mapping of Al ion-implanted silicon carbide crystals by X-ray penetration-depth-controlled grazing incidence topography

△ [19a-PG5-3] Basic study on energy band structure of IV element compound semiconductors for solar cell

△ [19a-PG5-4] Evaluation by TEM of misfit dislocations in silicon epitaxial wafers

△ [19a-PG5-5] Evaluation of GaN wafer for power devices by Raman spectroscopy

△ [19a-PG5-6] Evaluation of stacking fault in SiC substrate by TEM

△ [19a-PG5-7] Effects of dislocations on electrical characteristics of SiC-SBDs

[19a-PG5-8] Cryastal structure analysis of hydrolysis products of Thalidomide