Peiling Yuan¹, Ryo Tamaki², Lixue Cheng³, Nazmul Ahsan², Yoshitaka Okada², 〇Hirokazu Tatsuoka³ (1.Grad. Sch. Sci. & Technol., Shizuoka Univ., 2.RCAST, The Univ. of Tokyo, 3.Grad. Sch. Integr. Sci. & Technol., Dept. Eng., Shizuoka Univ.)

10:15 AM - 10:30 AM

▲ [7a-C13-6] Size Dependent Magnetic and Electric Properties of Superoxygenated Free Standing La₂CuO₄ Nanoparticles

〇Faisal Budiman¹, Yoichi Horibe¹, Hirofumi Tanaka¹ (1.Kyushu Institute of Technology)

10:45 AM - 11:00 AM

△ [7a-C13-7] Fabrication of Mg₂Si pn junction photodiodes with mesh type electrode

〇Yuma Onizawa¹, Tatsuya Nakano¹, Misa Yoshida², Daiju Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

11:00 AM - 11:15 AM

[7a-C13-8] Characterization of defect levels in p-BaSi₂/n-Si solar cells with various template growth durations by deep level transient spectroscopy

〇Suguru Yachi¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

11:15 AM - 11:30 AM

[7a-C13-9] The relationship between carrier density and IR absorption of annealed Mg₂Si crystals

〇(M1)Fuko Yaguchi¹, Kohei Nakano¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

11:30 AM - 11:45 AM

[7a-C13-10] Photoconductive spectra in n-type β-FeSi₂ with low electron density / p-type Si heterostructure

〇Motoki Iinuma¹, Hajime Eguchi¹, Naoki Murakoso¹, Hirofumi Hoshida¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

11:45 AM - 12:00 PM

▲ [7a-C13-11] Photoresponse properties of low B-doped p-BaSi₂on
P⁺ ion-implanted Si (111)

〇Emha Bayu Miftahullatif¹, Takabe Ryota¹, Yachi Suguru¹, Toko Kaoru¹, Suemasu Takashi¹ (1.Univ. of Tsukuba)

12:00 PM - 12:15 PM

▲ [7a-C13-12] Formation of hydrogenated amorphous Si layers by RF plasma generator on Al-capped Si(111) substrate: application to BaSi₂ solar cells

〇(M2)Zhihao Xu¹, Tianguo Deng¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

Oral presentation

[8a-C11-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Fri. Sep 8, 2017 9:00 AM - 12:15 PM C11 (Office 1)

Haruhiko Udono(Ibaraki Univ.), Kenji Yamaguchi(QST)

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9:00 AM - 9:15 AM

[8a-C11-1] Investigation of Si/Fe composition in β-FeSi₂ epitaxial films by spectroscopic ellipsometry

〇Naoki Murakoso¹, Hirofumi Hoshida¹, Motoki Iinuma¹, Hajime Eguchi¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

9:15 AM - 9:30 AM

[8a-C11-2] Effect of Ba/Si flux ratio on the electrical property of undoped BaSi₂ films

〇Ryota Takabe¹, Tianguo Deng¹, Komomo Kodama¹, Yudai Yamashita¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

9:30 AM - 9:45 AM

[8a-C11-3] Investigation of molecular vibration in BaSi₂ epitaxial films by infrared absorption measurement

〇Hirofumi Hoshida¹, Naoki Murakoso¹, Motoki Iinuma¹, Hajime Eguchi¹, Takashi Suemasu², Yoshikazu Terai¹ (1.Kyusyu Inst. of Tech., 2.Univ. of Tsukuba.)

9:45 AM - 10:00 AM

[8a-C11-4] Epitaxial growth of BaSi2 layered structure for BaSi2 p-n homojunction solar cells

〇Komomo Kodama¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

10:00 AM - 10:15 AM

[8a-C11-5] MBE growth of EuO on Si (111) with atomically flat interface

〇Rento Ohsugi¹, Hiroo Omi^1,2, Krockenberger Yoshiharu¹, Fujiwara Akira¹ (1.NTT BRL, 2.NTTNPC)

10:15 AM - 10:30 AM

[8a-C11-6] Effect of the crystal orientation of Ge substrates on the growth of SrGe₂ thin films

〇Toshifumi Imajo¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. of Tsukuba)

10:45 AM - 11:00 AM

△ [8a-C11-7] Impact of native oxide film on the capacitance-voltage characteristic using Pseudo-MOS structure

〇Isao Yarita¹, Shingo Sato¹, Yasuhisa Omura¹ (1.Kansai Univ.)

11:00 AM - 11:15 AM

[8a-C11-8] Surface Oxidation of Na doped Type II Si Clathrate Film

〇(M2)Tomoki Asano¹, Kazutoshi Urano¹, Fumitaka Ohashi¹, Tetsuji Kume¹, Takayuki Ban¹, Shuichi Nonomura¹ (1.Gifu Univ.)

11:15 AM - 11:30 AM

[8a-C11-9] Effect of Si substrate pretreatment on the performance of p-BaSi₂/n-Si solar cells

〇Yudai Yamashita¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

11:30 AM - 11:45 AM

[8a-C11-10] Reduction of oxygen concentration and its effect on the preferred orientation of evaporated BaSi₂ films

〇Kosuke Hara¹, Junji Yamanaka¹, Keisuke Arimoto¹, Kiyokazu Nakagawa¹, Noritaka Usami² (1.Univ. Yamanashi, 2.Nagoya Univ.)

11:45 AM - 12:00 PM

△ [8a-C11-11] Substitutional Effect of Tin Oxide in Conductive Vanadate Glass

〇(M1)Yuki Fujita¹, Tomoka Izumi¹, Shiro Kubuki², Tetsuaki Nishida¹, Nobuto Oka¹ (1.Kindai University, 2.TMU)

12:00 PM - 12:15 PM

△ [8a-C11-12] Development of Vanadate Glass-based Air Electrode Catalyst applied to Metal-Air Secondary Battery

〇Hajime Miyamoto¹, Masayoshi Yuasa¹, Tetsuaki Nishida¹, Nobuto Oka¹ (1.Kindai Univ.)

Poster presentation

[7p-PB4-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

Thu. Sep 7, 2017 1:30 PM - 3:30 PM PB4 (P)

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1:30 PM - 3:30 PM

[7p-PB4-1] In-plane distribution of 1.5 μm PL intensity in Si/B-doped β-FeSi₂/Si stacked structures

〇Shuya Ikeda¹, Kenta Setojima¹, Kazuya Ogi¹, Naohiro Oka¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

1:30 PM - 3:30 PM

[7p-PB4-2] PL lifetimes of Si defect-related PLs in surface-damaged Si substrate(II)

〇Kazuya Ogi¹, Naohiro Oka¹, Shuya Ikeda¹, Kenta Setojima¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

1:30 PM - 3:30 PM

[7p-PB4-3] Ballistic Transport Characteristics Considering Tunneling Current in Silicane and Germanane MOSFET

〇(M2)Naosuke Oka¹, Matsuto Ogawa¹, Satofumi Souma¹ (1.Kobe Univ.)

1:30 PM - 3:30 PM

[7p-PB4-4] Influence of the tunnel effect on
anisotropic electrical conduction characteristics of black phosphorus FET

〇Yuya Sotoda¹, Matsuto Ogawa¹, Satohumi Souma¹ (1.Kobe Univ.)

1:30 PM - 3:30 PM

[7p-PB4-5] Synthesis of thin film of guest free type II Ge clathrate (Ge₁₃₆) part II

〇Shota Suzuki¹, Tetsuji Kume¹, Kentaro Sakai², Himanshu S Jha¹, Fumitaka Ohashi¹, Shuichi Nonomura¹, Atsuhiko Fukuyama² (1.Gifu Univ, 2.Miyazaki Univ)

1:30 PM - 3:30 PM

[7p-PB4-6] Synthesis of guest free SiGe clathrate

〇Kunihiko Yamada¹, Takuya Kino¹, Himanshu S. Jha¹, Tetsuji Kume¹ (1.Gifu Univ.)

1:30 PM - 3:30 PM

[7p-PB4-7] Formation of Mg₂Si_1-xSn_x thin films by co-sputtering

Hideyuki Wada¹, 〇Hiroshi Katsumata¹, Hidenari Yamamoto², Tomoharu Kataoka², Shinsuke Hirono², Mamoru Ishikiriyama² (1.Meiji Univ., 2.Toyota Motor Corp.)

1:30 PM - 3:30 PM

[7p-PB4-8] Preparation of BaSi₂ thin-films on Si (111) by helicon-wave-plasma sputtering

〇Satoshi Matsuno¹, Ryota takabe¹, Kaoru Toko¹, Takashi suemasu^1,2 (1.Univ. tsukuba, 2.JST-CREST)

1:30 PM - 3:30 PM

[7p-PB4-9] Detection of defects in BaSi₂ epitaxial films on Si(111) by deep level transient spectroscopy

〇Takuma Sato¹, Ryota Takabe¹, Komomo Kodama¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

1:30 PM - 3:30 PM

▲ [7p-PB4-10] Carrier transport properties of boron-doped p-BaSi₂ on Si(111) and Si(001)

〇(D)Tianguo Deng¹, Miftahullatif Emha Bayu¹, Zhihao Xu¹, Ryota Takabe¹, Kaoru Toko¹, Takashi Suemasu¹ (1.Univ. Tsukuba)

1:30 PM - 3:30 PM

[7p-PB4-11] Magnetic Structure Study in [Fe₃Si/FeSi₂]₂₀ Superlattices

〇Takayasu Hanashima¹, Satoshi Takeichi², Noboru Miyata¹, Ken-ichiro Sakai³, Hiroyuki Deguchi⁴, Tsuyoshi Yoshitake² (1.CROSS, 2.Kyushu Univ., 3.Kurume NCT, 4.Kyushu Inst. Tech.)

1:30 PM - 3:30 PM

[7p-PB4-12] Characterization of ring electrode type Mg₂Si pn junction photodiodes

〇Yuma Onizawa¹, Tomohiro Akiyama¹, Tatsuya Nakano¹, Daiju Tsuya², Haruhiko Udono¹ (1.Ibaraki Univ., 2.NIMS)

Sessions

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[7a-C13-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

△ [7a-C13-4] The generation and detection of spin current in iron silicide spin valve elements

▲ [7a-C13-6] Size Dependent Magnetic and Electric Properties of Superoxygenated Free Standing La2CuO4 Nanoparticles

△ [7a-C13-7] Fabrication of Mg2Si pn junction photodiodes with mesh type electrode

▲ [7a-C13-11] Photoresponse properties of low B-doped p-BaSi2 onP+ ion-implanted Si (111)

▲ [7a-C13-12] Formation of hydrogenated amorphous Si layers by RF plasma generator on Al-capped Si(111) substrate: application to BaSi2 solar cells

[8a-C11-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

△ [8a-C11-7] Impact of native oxide film on the capacitance-voltage characteristic using Pseudo-MOS structure

△ [8a-C11-11] Substitutional Effect of Tin Oxide in Conductive Vanadate Glass

△ [8a-C11-12] Development of Vanadate Glass-based Air Electrode Catalyst applied to Metal-Air Secondary Battery

[7p-PB4-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

▲ [7p-PB4-10] Carrier transport properties of boron-doped p-BaSi2 on Si(111) and Si(001)

Authentication

▲ [7a-C13-6] Size Dependent Magnetic and Electric Properties of Superoxygenated Free Standing La₂CuO₄ Nanoparticles

△ [7a-C13-7] Fabrication of Mg₂Si pn junction photodiodes with mesh type electrode

▲ [7a-C13-11] Photoresponse properties of low B-doped p-BaSi₂on
P⁺ ion-implanted Si (111)

▲ [7a-C13-12] Formation of hydrogenated amorphous Si layers by RF plasma generator on Al-capped Si(111) substrate: application to BaSi₂ solar cells

▲ [7p-PB4-10] Carrier transport properties of boron-doped p-BaSi₂ on Si(111) and Si(001)