Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[19p-C204-1~17] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Mon. Mar 19, 2018 1:45 PM - 6:15 PM C204 (52-204)

Hisataka Hayashi(TOSHIBA), Yoshihide Kihara(Tokyo Electron Miyagi Limited)

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▲：英語発表
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1:45 PM - 2:00 PM

[19p-C204-1] Investigation of Ge Etching Mechanism by Neutral Beam Etching

〇Shuichi Noda^1,2, Yosuke Tanimoto³, Takuya Ozaki², Hideyuki Kurihara³, Yasuyuki Hoshino³, Kazuhiko Endo^1,2, Seiji Samukawa^1,2 (1.AIST, 2.Tohoku Univ., 3.SHOWA DENKO)

2:00 PM - 2:15 PM

[19p-C204-2] High Aspect Ratio Silicon Nanopillar Structure Fabricated by Neutral Beam Etching and Bio-template

〇Daisuke Ohori¹, Kazuhiko Endo^1,3, Seiji Samukawa^1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.AIST)

2:15 PM - 2:30 PM

[19p-C204-3] Effects of Low Energy Ar⁺ Ion Irradiation on Hexafluoroacetylacetone (hfac) Adsorbed Ni and Cu Surfaces

〇Tomoko Ito¹, Kazuhiro Karahashi¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

2:30 PM - 2:45 PM

[19p-C204-4] Rapid Thermal Cyclic Atomic-Level Etching of Tungsten

〇Kazunori Shinoda¹, Yuko Hanaoka², Nobuya Miyoshi¹, Hiroyuki Kobayashi¹, Kohei Kawamura², Masaru Izawa², Kenji Ishikawa³, Masaru Hori³ (1.Hitachi R&D, 2.Hitachi High-Tech, 3.Nagoya Univ.)

2:45 PM - 3:00 PM

△ [19p-C204-5] Elucidation of radical adsorption mechanism for atomic layer etching of gallium nitride

〇Masaki Hasegawa¹, Takayoshi Tsutsumi¹, Atsushi Tanide^1,2, Hiroki Kondo¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ., 2.SCREEN Holdings Co., Ltd.)

3:00 PM - 3:15 PM

[19p-C204-6] Change in surface morphology of fluorinated Si surface by Ar ion irradiation

Atsuki Asano¹, 〇Takayoshi Tsutsumi¹, Hiroki Kondo¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

3:15 PM - 3:30 PM

[19p-C204-7] SiO₂ and Si etching reactions by CxFy⁺ ion bombardment

〇Kazuhiro Karahashi¹, Hu Li¹, Tomoko Ito¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

3:30 PM - 3:45 PM

[19p-C204-8] Electronic properties and dissociation channels of C₂H_xF_y compounds (I)

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ. Plasma nano Technology Center)

3:45 PM - 4:00 PM

[19p-C204-9] Electronic properties and dissociation channels of C₂H_xF_y compounds(II)

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ. Plasma nano Technology Center)

4:00 PM - 4:15 PM

[19p-C204-10] Effect of Oxidative Modification on Spin On Glass Film using Microwave Excited Bubble Plasma in Water

〇Sachiko Fujisawa¹, Masakuni Ikagawa², Nobuaki Makino² (1.Toshiba Materials Co., Ltd, 2.Toshiba Corp.)

4:30 PM - 4:45 PM

△ [19p-C204-11] Temporal variation of Ar metastable density in pulse modulated inductively coupled plasma and its impact on the VUV/UV radiation-induced damage

〇Naoki Takeda¹, Yasufumi Miyoshi², Kenji Ishikawa¹, Takayoshi Tsutsumi¹, Keigo Takeda³, Takayuki Ohta³, Hiroki Kondo¹, Masanaga Fukasawa², Tetsuya Tatsumi², Masaru Hori¹ (1.Nagoya Univ., 2.Sony Semiconductor Solutions Corp., 3.Meijo Univ.)

4:45 PM - 5:00 PM

[19p-C204-12] Generation & annealing of plasma-induced defects ~ ion-created residual defects ~

〇Shota Nunomura¹, Isao Sakata¹, Koji Matsubara¹ (1.AIST RCPV)

5:00 PM - 5:15 PM

[19p-C204-13] Generation and annealing of plasma-induced defects ~ activation energy of annealing~

〇Shota Nunomura¹, Isao Sakata¹, Koji Matsubara¹ (1.AIST RCPV)

5:15 PM - 5:30 PM

[19p-C204-14] Model Predictions of Capacitance-Voltage (C-V) Characteristic of Plasma Process-Damaged Si Substrate

〇Takashi Hamano¹, Yoshinori Nakakubo¹, Koji Eriguchi¹ (1.Kyoto Univ.)

5:30 PM - 5:45 PM

△ [19p-C204-15] First-principles-based prediction of the local structures damaged by plasma exposures

〇Yuta Yoshikawa¹, Koji Eriguchi¹ (1.Kyoto Univ.)

5:45 PM - 6:00 PM

[19p-C204-16] Controllability improvement of the etching rate distribution by pulse plasma

〇Mamoru Yakushiji¹, Kenichi Kuwahara¹, Michikazu Morimoto¹ (1.Hitachi High-Technologies)

6:00 PM - 6:15 PM

[19p-C204-17] Improvement of Etching Process Distribution Controllability within a Wafer by Tuning Etching-byproduct Density Distribution

〇Tetsuo Kawanabe¹, Isao Mori¹, Motohiro Tanaka¹, Naoki Yasui¹ (1.HHT)

Session information