Oral presentation

[20a-C202-1~11] 15.7 Crystal characterization, impurities and crystal defects

Tue. Sep 20, 2022 9:00 AM - 12:00 PM C202 (C202)

Hidetoshi Suzuki(Miyazaki Univ.), Kazuhisa Torigoe(SUMCO)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[20a-C202-1] Temperature variation of photoluminescence from heavily Cr doped ruby

〇(M1)Ami Hitomi¹, Toru Katsumata^1,2, Hiroaki Aizawa¹ (1.Toyo Univ., 2.Toyo Inst.)

9:15 AM - 9:30 AM

[20a-C202-2] Surface structures of vicinal 4H-SiC m-surfaces

〇(M2)Shintaro Murase¹, Kohei Fukuma¹, Anton Visikovskiy¹, Satoru Tanaka¹ (1.Kyusyu Univ.)

9:30 AM - 9:45 AM

△ [20a-C202-3] Mechanisms of crack generation and suppression in hetero growth of strain-induced semiconductor thin films

〇Youya Wagatsuma¹, Rena Kanesawa¹, Alam Md. Mahfuz^1,2, Kazuya Okada¹, Takahiro Inoue¹, Michihiro Yamada³, Kohei Hamaya^3,4, Kentarou Sawano¹ (1.Tokyo City Univ., 2.Univ. of Barishal, 3.CSRN, Osaka Univ., 4.OTRI, Osaka Univ.)

9:45 AM - 10:00 AM

[20a-C202-4] Observation of Dislocation in Ge Single Crystal Substrates by X-ray Topography Using the Superbolman Effect

〇Yusuke Ito¹, Kenta Takatsu¹, Yoshiyuki Tsusaka¹, Jyunji Matsui² (1.Univ. of Hyogo, 2.Nano-Tech.Lab)

10:00 AM - 10:15 AM

[20a-C202-5] Identification of Dislocation Characteristics ZnO substrates by Means of Bright-Field X-ray Topography

〇Yusuke Namioka¹, Yusuke Ito¹, Daiki Hayase¹, Yuichi Ota², Yoshiyuki Tsusaka¹ (1.Univ. of Hyogo, 2.TIRI)

10:15 AM - 10:30 AM

[20a-C202-6] X-ray topographic observation of defect structure in ScAlMgO₄ cross-section wafer

〇Kotaro Ishiji¹, Takashi Fujii^2,3, Tsutomu Araki², Yuji Shiraishi³, Tsuguo Fukuda³ (1.SAGA-LS, 2.Ritsumeikan Univ, 3.Fukuda Crystal Lab)

10:45 AM - 11:00 AM

[20a-C202-7] Dislocation density analysis of Al₂O₃ grown by vertical Bridgman method

〇Koichi Kakimoto¹, Isao Takahashi², Taketoshi Tomida², Satoshi Nakano³, Akira Yoshikawa⁴ (1.NICHe, Tohoku Univ., 2.C&A Co., 3.RIAM, Kyushu Univ., 4.IMR, Tohoku Univ.)

11:00 AM - 11:15 AM

[20a-C202-8] Dislocation density analysis of β-Ga₂O₃ grown by vertical Bridgman method

〇Koichi Kakimoto¹, Isao Takahashi², Taketoshi Tomida², Kei Kamada², Yongzhao Yao³, Satoshi Nakano⁴, Akira Yoshikawa⁵ (1.NICHe, Tohoku Univ., 2.C&A Co., 3.JFCC, 4.RIAM, Kyushu Univ., 5.IMR, Tohoku Univ.)

11:15 AM - 11:30 AM

[20a-C202-9] Insight into dislocation generation at Σ3 grain boundaries in cast-grown silicon ingots

〇Yutaka Ohno¹, Hideto Yoshida², Tatsuya Yokoi³, Katsuyuki Matsunaga³, Koji Inoue¹, Yasuyoshi Nagai¹, Noritaka Usami³ (1.IMR, Tohoku Univ., 2.SANKEN, Osaka Univ., 3.GSE, Nagoya Univ.)

11:30 AM - 11:45 AM

[20a-C202-10] Stress analysis of multicrystalline Si with artificial grain boundaries and
evaluation of dislocation cluster distribution

〇Haruki Tajika¹, Kentaro Kutsukake², Takuto Kojima³, Xin Liu¹, Hiroyuki Tanaka¹, Noritaka Usami¹ (1.Graduate School of Eng., Nagoya Univ., 2.AIP, RIKEN., 3.Graduate School of Info., Nagoya Univ.)

11:45 AM - 12:00 PM

[20a-C202-11] Ingot-scale and crystal-orientation-based analysis on growth dynamics of multicrystalline silicon

〇(P)Takuto Kojima¹, Kyoka Hara², Kentaro Kutsukake³, Tetsuya Matsumoto¹, Hiroaki Kudo¹, Noritaka Usami² (1.Grad. Info. Nagoya Univ., 2.Grad. Eng. Nagoya Univ., 3.AIP RIKEN)

Oral presentation

[20p-C202-1~8] 15.7 Crystal characterization, impurities and crystal defects

Tue. Sep 20, 2022 1:30 PM - 3:45 PM C202 (C202)

Takuto Kojima(Nagoya Univ.), Haruo Sudo(GlobalWafers)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[20p-C202-1] Development of Interatomic Potentials for Binary Metals
applying First-Principles Calculations and Machine Learning

〇Takeru Miyagawa¹, Yugo Sakai¹, Akio Yonezu¹, Kazuki Mori², Nobuhiko Kato², Keiji Ishibashi³ (1.Chuo Univ., 2.CTC, 3.COMET Inc.)

1:45 PM - 2:00 PM

[20p-C202-2] Impact of Interstitial Oxygen on Stability of Nitrogen-Vacancy Complexes in Czochralski Silicon Single Crystals (2)

〇Akira Sada¹, Yusuke Noda², Koji Sueoka², Kaoru Kajiwara³, Masataka Hourai³ (1.Graduate School of Okayama Pref. Univ., 2.Okayama Pref. Univ., 3.SUMCO Corporation)

2:00 PM - 2:15 PM

[20p-C202-3] Stability of an oxygen atom near a Frank partial dislocation loops in Si crystals

〇Eiji Kamiyama^1,2, Yusuke NODA², Koji SUEOKA² (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)

2:15 PM - 2:30 PM

[20p-C202-4] Evaluation for the Coulomb repulsions through Wannier Functions with Selected Columns of the Density Matrix method

〇Jun Inagaki^1,2 (1.RIXS Sim. Research, 2.Tamkang Univ.)

2:45 PM - 3:00 PM

[20p-C202-5] Hydrogen diffusion behavior of CH₄N-molecular-ion-implanted wafers for 3D stacked CMOS image sensors

〇Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Akihiro Suzuki¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Yoshihiro Koga¹, Kazunari Kurita¹ (1.SUMCO)

3:00 PM - 3:15 PM

[20p-C202-6] Quality of silicon substrate and point defects (8) Non-uniformity of lattice parameter in Avogadro crystal

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ.)

3:15 PM - 3:30 PM

[20p-C202-7] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal
(21) Thermal behavior of VN complexes

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ.)

3:30 PM - 3:45 PM

[20p-C202-8] Measurement of carbon concentration in silicon crystal
(25) 10¹³/cm³ range by low temperature infrared absorption

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Metropolitan Univ.)

Poster presentation

[22p-P12-1~3] 15.7 Crystal characterization, impurities and crystal defects

Thu. Sep 22, 2022 1:30 PM - 3:30 PM P12 (Arena)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 3:30 PM

[22p-P12-1] Investigation of Behavior of Intrinsic Point Defects Formation during Cz Heavy-Doped Silicon Growth by Numerical Modeling

〇Yuji Mukaiyama^1,2, Koji Sueoka³ (1.Graduate School of Okayama Pref. Univ., 2.STR Japan K.K., 3.Okayama Pref. Univ.)

1:30 PM - 3:30 PM

[22p-P12-2] Temperature dependence of photoluminescence intensity decay by laser irradiation of GaPN alloy

〇Yoshiyasu Yagihashi¹, Kengo Takamiya¹, Norihiko Kamata¹, Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)

1:30 PM - 3:30 PM

[22p-P12-3] Time-Resolved Photoluminescence Study of the Influence of Superlattice Structures on the Emission from AlGaN Quantum Wells

〇Shohei Kamada¹, Norihiko Kamata¹, Shuhei Yagi¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)

Sessions

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[20a-C202-1~11] 15.7 Crystal characterization, impurities and crystal defects

[20a-C202-1] Temperature variation of photoluminescence from heavily Cr doped ruby

[20a-C202-2] Surface structures of vicinal 4H-SiC m-surfaces

△ [20a-C202-3] Mechanisms of crack generation and suppression in hetero growth of strain-induced semiconductor thin films

[20a-C202-4] Observation of Dislocation in Ge Single Crystal Substrates by X-ray Topography Using the Superbolman Effect

[20a-C202-5] Identification of Dislocation Characteristics ZnO substrates by Means of Bright-Field X-ray Topography

[20a-C202-6] X-ray topographic observation of defect structure in ScAlMgO₄ cross-section wafer

[20a-C202-7] Dislocation density analysis of Al₂O₃ grown by vertical Bridgman method

[20a-C202-8] Dislocation density analysis of β-Ga₂O₃ grown by vertical Bridgman method

[20a-C202-9] Insight into dislocation generation at Σ3 grain boundaries in cast-grown silicon ingots

[20a-C202-10] Stress analysis of multicrystalline Si with artificial grain boundaries and
evaluation of dislocation cluster distribution

[20a-C202-11] Ingot-scale and crystal-orientation-based analysis on growth dynamics of multicrystalline silicon

[20p-C202-1~8] 15.7 Crystal characterization, impurities and crystal defects

[20p-C202-1] Development of Interatomic Potentials for Binary Metals
applying First-Principles Calculations and Machine Learning

[20p-C202-2] Impact of Interstitial Oxygen on Stability of Nitrogen-Vacancy Complexes in Czochralski Silicon Single Crystals (2)

[20p-C202-3] Stability of an oxygen atom near a Frank partial dislocation loops in Si crystals

[20p-C202-4] Evaluation for the Coulomb repulsions through Wannier Functions with Selected Columns of the Density Matrix method

[20p-C202-5] Hydrogen diffusion behavior of CH₄N-molecular-ion-implanted wafers for 3D stacked CMOS image sensors

[20p-C202-6] Quality of silicon substrate and point defects (8) Non-uniformity of lattice parameter in Avogadro crystal

[20p-C202-7] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal
(21) Thermal behavior of VN complexes

[20p-C202-8] Measurement of carbon concentration in silicon crystal
(25) 10¹³/cm³ range by low temperature infrared absorption

[22p-P12-1~3] 15.7 Crystal characterization, impurities and crystal defects

[22p-P12-1] Investigation of Behavior of Intrinsic Point Defects Formation during Cz Heavy-Doped Silicon Growth by Numerical Modeling

[22p-P12-2] Temperature dependence of photoluminescence intensity decay by laser irradiation of GaPN alloy

[22p-P12-3] Time-Resolved Photoluminescence Study of the Influence of Superlattice Structures on the Emission from AlGaN Quantum Wells

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