Oral presentation

13 Semiconductors » 13.7 Compound and power devices, process technology and characterization

[17p-A301-1~18] 13.7 Compound and power devices, process technology and characterization

Fri. Mar 17, 2023 1:00 PM - 6:00 PM A301 (Building No. 6)

Masashi Kato(Nagoya Inst. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

△ [17p-A301-1] Location of Gate Leakage of GaN HEMT Observed using Thermal Lock-in Analysis

〇(B)Yoshiki Sakita¹, Hisao Kobayashi², Qiang Ma¹, Hiroto Saito¹, Kenji Osaki¹, Syunsuke Ito¹, Akio Wakejima¹ (1.Nagoya Inst. of Tech., 2.Nippon BARNES)

1:15 PM - 1:30 PM

[17p-A301-2] Difference in TR-PL signals for GaN epilayers on HVPE and OVPE substrates

〇Tatsuya Ishii¹, Shigeyoshi Usami², Yusuke Mori², Hirotaka Watanabe³, Shugo Nitta³, Yoshio Honda³, Hiroshi Amano³, Masashi Kato¹ (1.NITech, 2.Osaka Univ., 3.Nagoya Univ.)

1:30 PM - 1:45 PM

[17p-A301-3] MOS channel characteristics of Mg-implanted lateral MOSFET activated by UHPA

〇Ryo Tanaka¹, Shinya Takashima¹, Katsunori Ueno¹, Tsurugi Kondo¹, Takuro Inamoto¹, Masaharu Edo¹, Michal Bockowski², Tetsu Kachi³ (1.Fuji Electric, 2.Unipress, 3.Nagoya Univ.)

1:45 PM - 2:00 PM

△ [17p-A301-4] AlGaInN/GaN HEMTs on Single-Crystal AlN Substrate(Ⅱ)

〇Tomoyuki Kawaide¹, Sakura Tanaka¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)

2:00 PM - 2:15 PM

[17p-A301-5] Fabrication of high AlN ratio Al_0.7Ga_0.3N channel HFETs on single-crystal AlN substrates

〇Tomoyuki Kawaide¹, Sakura Tanaka¹, Yoshinobu Kometani¹, Takashi Egawa¹, Makoto Miyoshi¹ (1.Nagoya Inst. Tech.)

2:15 PM - 2:30 PM

△ [17p-A301-6] Characterization of recombination current in homoepitaxial GaN p-n junction diode with N atoms displacement-related defects introduced by electron beam irradiation

〇Meguru Endo¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

2:45 PM - 3:00 PM

[17p-A301-7] Hall effect measurement of defect levels introduced by 137 keV electron beam irradiation in homoepitaxial n-type GaN

〇Chihiro Kojima¹, Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

3:00 PM - 3:15 PM

[17p-A301-8] Origin of minority carrier signal observed in capacitance transient spectroscopy of GaN pn junction diodes applying a filling pulse of 0 V

〇Taketo Shimizu¹, Takuto Ohashi¹, Kazuyoshi Tomita², Masahiro Horita^1,2, Jun Suda^1,2 (1.Nagoya Univ., 2.IMass Nagoya Univ.)

3:15 PM - 3:30 PM

[17p-A301-9] Pressure effect on diffusion of native defects and Mg impurity in Mg-ion-implanted GaN

〇Emi Kano¹, Koki Kobayashi¹, Ritsuo Otsuki¹, Keita Kataoka², Tetsuo Narita², Kacper Sierakowski³, Michal Bockowski³, Tetsu Kachi¹, Nobuyuki Ikarashi¹ (1.Nagoya Univ., 2.Toyota Central Labs, 3.IHPP PAS)

3:30 PM - 3:45 PM

[17p-A301-10] Theoretical studies on behavior of Mg acceptors in GaN

〇(P)Kaori Seino^1,2, Atsushi Oshiyama¹, Ryosuke Sakurai³, Kenji Shiraishi^1,3 (1.IMaSS, Nagoya Univ., 2.Jena Univ., 3.Graduate School of Engineering, Nagoya Univ.)

3:45 PM - 4:00 PM

[17p-A301-11] Development of GaN Recycling Wafer Process Enabling Low Cost and CO₂ Emission

〇Junji Ohara¹, Masatake Nagaya¹, Kazukuni Hara¹, Shinichi Hoshi¹, Takashi Kanemura¹, Takashi Ushijima¹, Takashi Ishida¹, Shosuke Nakabayashi¹, Kozo Kato¹, Takayuki Koyama¹, Yoshitaka Nagasato¹, Kazuhiro Tsuruta¹, Jun Kojima^1,2, Shoichi Onda^1,2, Tsutomu Uesugi², Atsushi Tanaka², Chiaki Sasaoka², Jun Suda², Keisuke Hara³, Daisuke Kawaguchi³, Koji Kuno³, Tetsuya Osajima³ (1.MIRISE, 2.Nagoya Univ., 3.HAMAMATSU PHOTONICS)

4:00 PM - 4:15 PM

[17p-A301-12] Electrical property of vertical PNDs and lateral MOSFETs on a recycled GaN wafer

〇Takashi Ishida¹, Takashi Ushijima¹, Shosuke Nakabayashi¹, Kozo Kato¹, Takayuki Koyama¹, Yoshitaka Nagasato¹, Junji Ohara¹, Shinichi Hoshi¹, Masatake Nagaya¹, Kazukuni Hara¹, Takashi Kanemura¹, Kazuhiro Tsuruta¹, Jun Kojima^1,2, Tsutomu Uesugi², Atsushi Tanaka², Chiaki Sasaoka², Shoichi Onda^1,2, Jun Suda², Keisuke Hara³, Daisuke Kawaguchi³, Koji Kuno³, Tetsuya Osajima³ (1.MIRISE Technologies, 2.Nagoya Univ., 3.HAMAMATSU PHOTONICS)

4:30 PM - 4:45 PM

[17p-A301-13] Isolation of N-polar GaN HEMT by digital etching

〇Kosuke Saito¹, Sano Haruki¹, Nakagawa Ryo¹, Makabe Isao², Nakata Ken², Gotow Takahiro¹, Miyamoto Yasuyuki¹ (1.Tokyo Tech, 2.Sumitomo Electric Industries)

4:45 PM - 5:00 PM

[17p-A301-14] Electron mobility enhancement in n-GaN under Ohmic-metal

〇kazuya Uryu^1,2, Yuchen Deng¹, Son Phuong Le³, Toshi-kazu Suzuki¹ (1.JAIST, 2.ATL, 3.Linkoping Univ.)

5:00 PM - 5:15 PM

[17p-A301-15] Effects of PEC etching for fermi-level pinning in AlGaN/GaN HEMTs

〇Ryota Ochi¹, Takuya Togashi¹, Yoshito Osawa¹, Fumimasa Horikiri², Noboru Fukuhara², Masamichi Akazawa¹, Taketomo Sato¹ (1.RCIQE, 2.Sumitomo Chemical)

5:15 PM - 5:30 PM

[17p-A301-16] Improvement of threshold voltage controllability in fabrication of recessed gate GaN HEMTs by introducing etch stop detection layer

〇Kensuke Oishi¹, Hidemasa Takahashi¹, Yuji Ando^1,2, Akio Wakejima³, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.Nagoya Inst. of Tech.)

5:30 PM - 5:45 PM

[17p-A301-17] Carrier scattering mechanism of 2DEG in InAlN/AlN/GaN structures depending on AlN thickness

〇Yuta Komori¹, Kazuo Tsutsui¹, Takuya Hoshii¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Kiyotaka Miyano², Takashi Yoda^2,1, Ichirou Mizushima^1,2, Masayuki Tsukui² (1.Tokyo Tech, 2.NuFlare Technology)

5:45 PM - 6:00 PM

[17p-A301-18] A Method for Deriving Thermal Time Constants of Power Devices by Obserbing Gate Voltages

〇Masahiro Nomura¹, Tokihiko Mori¹, Takayasu Sakurai¹ (1.The Univ. of Tokyo)

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