[B-4-5] A New MOS-Gate Bipolar Transistor with Fast Switching Speed and High Current Capability

T. Tanaka、Y. Yasuda、M. Ohayashi、M. Okamura (1.Hitachi Research Laboratory, Hitachi Ltd.)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-4-6] High-Current, High-Frequency Gate Turn-Off Thyristors with P+P-Anode Emitter Structure

Makoto Azuma、Takashi Shinohe、Katsuhiko Takigami、Hiromichi Ohashi (1.Toshiba Research and Development Center)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-1] Nonstoichiometric Defects in GaAs

Jacek Lagowski、Harry C. Gatos (1.Massachusetts Institute of Technology)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-2] High Transconductance GaAs MESFETs Fabricated Using Sidewall-Assisted Self-Alignment Technology (SWAT)

K. Ueno、T. Furutsuka、M. Kanamori、A. Higashisaka (1.Microelectronics Research Laboratories, NEC Corporation)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-3] Through-AIN Implantation Technology for 1.7 ns GaAs 4kX1b SRAM

H. Kawata、H. Onodera、T. Shinoki、N. Yokoyama、H. Nishi (1.Fujitsu Laboratories Ltd., Atsugi)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-4] Advanced GaAs SAINT FET Fabrication Technology and its Application to above 9 GHz Frequency Divider

T. Enoki、K. Yamasaki、K. Osafune、K. Ohwada (1.NTT Atsugi Electrical Communication Laboratories)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-5] 6-7 GHz GaAs IC's with High Yield 0.5 μm Gate-Length SAINT

N. Kato、T. Takada、K. Yamasaki、M. Hirayama (1.NTT Atsugi Electrical Communication Laboratories)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-6] A New Technique of Exploiting Forward Nonlinear Reactance of P+-N Junction

Jiang Guanhui (1.Nanjing Solid State Devices Research Institute)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-7] Absence of Side-Gating in InP MISFET Integrated Circuits

H. Hasegawa、T. Kitagawa、H. Masuda、H. Yano、H. Ohno (1.Department of Electrical Engineering, Faculty of Engineering Hokkaido University)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-8] Characterization of Microscopic Uniformity of Semi-Insulating GaAs Substrate by Using High Density FET Array

Hiroshi Nakamura、Hajime Matsuura、Takashi Egawa、Yoshiaki Sano、Toshimasa Ishida、Katsuzo Kaminishi (1.Research Laboratory, Oki Electric Industry Co., Ltd.)

1985 Conference on Solid State Devices and Materials |PDF ダウンロード