The Japan Society of Applied Physics

365件中(311 - 320)

[S-I-9-2] High-Mobility p-Channel MOSFET on Strained Si

D. K. Nayak、J. C. S. Woo、J. S. Park、K. L. Wang、K. P. MacWilliams (1.Department of Electrical Engineering University of California、2.The Aerospace Corporation、3.Research Center for Advanced Science and Technology (RCAST) The University of Tokyo)

1993 International Conference on Solid State Devices and Materials |PDF ダウンロード

365件中(311 - 320)